Nickel-Vanadium Adhesion Layer for Laser Dicing Compound Semiconductor Wafers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing backside metalized semiconductor wafers are cumbersome, costly, and prone to issues like peeling and non-uniform corrosion, especially when using laser dicing on compound semiconductor wafers like gallium arsenide, due to weak van der Waals forces and chemical etching requirements.
Innovation Solution
A method involving the formation of a nickel-vanadium adhesion layer (90-97% nickel, 3-10% vanadium) on the back surface of the wafer, followed by a titanium tungsten alloy layer and a gold metallization layer, which enhances bonding and allows direct laser dicing without prior etching, reducing manufacturing time and cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photolithography and chemical etching are used to form back metallization layer, then the metallization layer can be formed, but the process becomes cumbersome with many steps, requires chemical reagents and liquid waste treatment, increasing time, cost and labor
Solution Approach 1:
The patent changes the material composition parameters of the adhesion layer by using a nickel-vanadium alloy with specific ratios (Ni: 90-97 wt%, V: 3-10 wt%) instead of conventional single-layer metals. This parameter change enables direct laser dicing without chemical etching, simplifying the manufacturing process while maintaining reliable bonding.
Solution Approach 2:
The patent employs a composite adhesion layer structure consisting of nickel-vanadium alloy combined with titanium tungsten alloy. This composite material approach provides both strong adhesion to the compound semiconductor wafer and compatibility with laser dicing, eliminating the need for complex photolithography and chemical etching processes.
2Productivity
If laser dicing is used to cut the back metallization layer, then the dicing process is simplified, but the peripheral region of the contact surfaces is susceptible to peeling due to weak van der Waals force
Solution Approach 1:
The patent uses a composite adhesion layer of nickel-vanadium alloy and titanium tungsten alloy that provides both laser-dicing compatibility and strong peripheral bonding. The nickel-vanadium component ensures strong adhesion to the compound semiconductor wafer, preventing peeling during laser dicing while maintaining high productivity.
Solution Approach 2:
By adjusting the composition parameters of the adhesion layer (specifically incorporating vanadium at 3-10 wt% with nickel), the patent enhances the bonding strength at the contact surface periphery, making it resistant to peeling during laser dicing while maintaining efficient dicing performance.
3Productivity
If laser dicing is used on compound semiconductor wafer with titanium tungsten/gold composite layer, then direct cutting is possible, but non-uniform corrosion causes discoloration affecting quality and reliability
Solution Approach 1:
The patent optimizes the composition parameters of the adhesion layer by using nickel-vanadium alloy with specific ratios, which exhibits uniform corrosion characteristics during laser dicing. This parameter optimization prevents non-uniform corrosion and discoloration, ensuring high manufacturing precision while maintaining fast processing speed.
Solution Approach 2:
The patent uses a consumable adhesion layer design that is optimized for laser dicing. The nickel-vanadium alloy layer is designed to be removed or modified during the laser dicing process, protecting the underlying compound semiconductor wafer from non-uniform corrosion and discoloration while enabling high-speed manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach strengthens the bonding between the semiconductor wafer and the metallization layer, enabling efficient and reliable laser dicing that minimizes peeling and corrosion, thus improving the yield and quality of semiconductor devices.
Implementation Method 1
forming an adhesion layer on the back surface of the compound semiconductor wafer, the adhesion layer including nickel in an amount ranging from 90 wt % to 97 wt % and vanadium in an amount ranging from 3 wt % to 10 wt %
Implementation Method 2
dicing process with a laser beam has been developed to directly cut the back metallization layer of the semiconductor wafer
Data Source
AI summary
A method for manufacturing a backside metalized compound semiconductor wafer includes the steps of: providing a compound semiconductor wafer; attaching the compound semiconductor wafer to a supporting structure; forming an adhesion layer including nickel and vanadium on a back surface of the compound semiconductor wafer; forming an alloy layer including titanium and tungsten on the adhesion layer; forming a metallization layer including gold on the alloy layer; and removing the supporting structure from the compound semiconductor wafer to obtain the backside metalized compound semiconductor wafer.