Semiconductor Package Wiring with Nickel Adhesion on Flat Insulation
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Solution Overview
Problem
Existing semiconductor wiring boards face challenges in achieving both high adhesiveness between insulating material layers and metal wiring while minimizing transmission loss in high-frequency bands, particularly when micronized wiring patterns are required.
Innovation Solution
A manufacturing method involving electroless plating to form a metal layer with a nickel content rate of 0.25 to 20% by mass on a flat insulating material layer with an arithmetic average roughness of 100 nm or less, without surface roughening, and using modification treatments like ultraviolet irradiation to enhance adhesiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the surface of the insulating material layer is roughened by wet desmear treatment to improve adhesiveness, then the adhesiveness between the seed layer and the insulating material layer is improved, but the transmission loss is increased by skin effect
Solution Approach 1:
The patent changes the surface roughness parameter from rough (conventional) to flat (Ra ≤ 100 nm) and compensates by optimizing the nickel content parameter in the metal layer to 0.25-20% by mass. This parameter substitution resolves the contradiction by maintaining adhesiveness through chemical composition control rather than physical surface roughness.
Solution Approach 2:
The patent uses a composite metal layer structure consisting of copper with controlled nickel content (0.25-20% by mass). This composite material approach allows the metal layer to provide both strong adhesion to the flat insulating surface and low transmission loss, as the nickel content is optimized to balance these two competing requirements.
2Strength
If the surface of the insulating material layer is roughened to obtain anchor effect, then the adhesiveness is improved, but it is difficult to form a micronized wiring pattern
Solution Approach 1:
The patent changes the surface roughness parameter to Ra ≤ 100 nm (flat surface) which enables precise micronized wiring pattern formation, while compensating for adhesiveness by controlling the nickel content in the metal layer to 0.25-20% by mass. This parameter substitution allows both flat surface for precision patterning and sufficient adhesion through chemical composition control.
3Manufacturing precision
If a flat insulating material layer surface is used to enable micronized wiring patterns, then the wiring pattern formation is facilitated, but the adhesiveness between the metal layer and insulating material layer is reduced
Solution Approach 1:
The patent uses a composite metal layer with copper and controlled nickel content (0.25-20% by mass) that provides strong adhesion to flat insulating surfaces. The nickel component chemically bonds to the flat surface, compensating for the lack of mechanical anchor effect, while the copper provides electrical conductivity and low transmission loss.
Solution Approach 2:
The patent optimizes the nickel content parameter in the metal layer to 0.25-20% by mass, which provides sufficient chemical adhesion to flat surfaces without excessive roughness. This parameter optimization enables both flat surface for precision patterning and adequate adhesiveness through controlled metal composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures excellent adhesiveness between insulating material layers and metal wiring while significantly reducing transmission loss in high frequencies, enabling micronized wiring patterns.
Implementation Method 1
a step of adsorbing an electroless plating catalyst to a first insulating material layer
Implementation Method 2
a step of forming a metal layer on a surface of the first insulating material layer by electroless plating
Implementation Method 3
a step of forming a conductive part in a region, which is the surface of the metal layer and is exposed from the resist, by electrolytic plating
Data Source
AI summary
A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.