NiCr Barrier Layer for Oxide Semiconductor Adherence
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Solution Overview
Problem
Thin film transistors in display devices face performance deterioration due to low adherence between oxide semiconductors and metal electrodes, leading to increased resistivity and reactiveness, which is exacerbated by the use of low resistivity metals in electrode formation.
Innovation Solution
Incorporating nickel-chromium (NiCr) barrier and protection layers between the oxide semiconductor and metal electrodes, along with using metals like copper, aluminum, and silver for electrodes, to enhance contact characteristics and prevent unwanted reactions, thereby maintaining low resistivity and improving adherence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metals with low resistivity (copper, aluminum, silver) are used for electrodes, then electrical conductivity is improved, but adherence between the electrode and oxide semiconductor deteriorates due to unnecessary reactions
Solution Approach 1:
A barrier layer comprising nickel-chromium (NiCr) is introduced between the low-resistivity metal electrode and the oxide semiconductor. This intermediary layer prevents direct contact and unwanted reactions between the metal and semiconductor, while maintaining good electrical conductivity through the metal layer and ensuring stable adherence to the oxide semiconductor.
2Reliability
If oxide semiconductor is used as active layer, then electron mobility is improved, but unwanted reactions with metal electrodes occur leading to performance deterioration
Solution Approach 1:
The nickel-chromium barrier layer serves as a protective intermediary between the oxide semiconductor and metal electrodes, preventing unwanted chemical reactions while allowing the oxide semiconductor to maintain its high electron mobility characteristics.
Solution Approach 2:
The barrier layer is formed in advance before depositing the metal electrodes, creating a protective interface that prevents unwanted reactions between the oxide semiconductor and metal materials from occurring during device operation.
3Use of energy by moving object
If barrier layer is added between electrode and semiconductor, then adherence and reaction prevention are improved, but device complexity increases
Solution Approach 1:
The barrier layer is formed using a composite material composition of nickel-chromium (NiCr), which combines the benefits of both nickel (good adherence and barrier properties) and chromium (oxidation resistance). This composite approach provides effective reaction prevention and good adherence in a single integrated layer, rather than requiring multiple separate layers.
Data Source
AI summary
A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).