p-Type NiO Interfacial Layer for Solar Cell Efficiency

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Solution Overview

Problem

Conventional bulk heterojunction solar cells face limitations in power conversion efficiency due to suboptimal interfacial effects, particularly electron leakage and inefficient hole extraction, which restrict the realization of maximum open-circuit voltage and fill factor.

Innovation Solution

Incorporation of a p-type nickel oxide (NiO) interfacial layer as a transparent electron-blocking layer to prevent electron leakage and facilitate hole transport, enhancing the energy level alignment and stability of the solar cell.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional bulk heterojunction solar cell structure is used without an interfacial layer, then the device structure is simple, but electron leakage occurs and hole extraction is inefficient, limiting power conversion efficiency

Engineering Contradiction:
Improvedevice structure simplicityVSAvoidelectron leakage and inefficient hole extraction
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

A p-type nickel oxide (NiO) interfacial layer is introduced between the transparent electrode and the active organic layer. This intermediary layer serves as an electron-blocking layer that prevents electron leakage to the electrode while facilitating efficient hole extraction, thereby resolving the contradiction between structural simplicity and energy loss without requiring complex multi-layer architectures

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If the open-circuit voltage is increased to improve power conversion efficiency, then higher voltage output is achieved, but interfacial effects and Schottky barriers limit the realization of maximum theoretical voltage

Engineering Contradiction:
Improveopen-circuit voltageVSAvoidinterfacial stability and Schottky barrier formation
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The p-type NiO interfacial layer modifies the energy level alignment at the electrode-organic interface by changing the electrical and electronic parameters of the interface. This parameter change optimizes the energy band structure, reduces Schottky barrier formation, and enables the realization of higher open-circuit voltages closer to the theoretical maximum while maintaining interfacial stability

Inventive Principle:
Principle #35Parameter changes

3Power

If the power conversion efficiency is increased to achieve higher energy output, then more energy is converted from light to electricity, but interfacial losses prevent achieving theoretical efficiency limits

Engineering Contradiction:
Improvepower conversion efficiencyVSAvoidinterfacial energy loss
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The p-type NiO interfacial layer acts as a mediator that eliminates interfacial energy losses by blocking electron leakage pathways and facilitating efficient hole extraction. This intermediary function reduces the gap between actual and theoretical power conversion efficiency, enabling the device to achieve higher energy output with minimal interfacial losses

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The NiO interfacial layer significantly increases the power conversion efficiency, open-circuit voltage, and fill factor of the solar cells, achieving up to 5.2% efficiency while maintaining device stability.

Implementation Method 1

blocking electrons leakage from the active organic layer to the ITO anode

Methodology Applied
Scientific EffectElectron blocking: Electrical Resistance

Implementation Method 2

transporting holes from the active organic layer to the ITO anode

Methodology Applied
Scientific EffectHole transport: Conduction (electrical)

Implementation Method 3

enhancing the energy level alignment and stability of the solar cell

Methodology Applied
Scientific EffectEnergy level alignment:

Implementation Method 4

Schottky barriers formed at the interfaces

Methodology Applied
Scientific EffectSchottky barrier formation: Electrical Resistance

Implementation Method 5

bulk heterojunction solar cells

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS8895848B2<i>p</i>-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells
Publication Date: 2014.11.25 NORTHWESTERN UNIV
  • US8895848B2 patent drawing
  • US8895848B2 patent drawing
  • US8895848B2 patent drawing

AI summary

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.