NIS Tunnel Junction Active Cooling for Quantum Processor Cryogenic Reliability
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Solution Overview
Problem
Traditional cooling methods for low and extremely low temperature quantum devices are bulky, expensive, and unreliable, making it challenging to maintain the required cryogenic temperatures for efficient operation.
Innovation Solution
An active cooling structure comprising a non-superconducting layer, a superconducting layer, and an insulator layer with Superconductor-Insulator-Normal Metal (NIS) tunnel junctions is used, which applies a voltage to transfer heat away from quantum processors, maintaining them at extreme low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional vapor compression coolers are used for cooling quantum devices, then cooling function is provided, but the system becomes bulky, expensive, and unreliable
Solution Approach 1:
The patent replaces traditional mechanical vapor compression cooling systems with an electronic cooling structure composed of NIS tunnel junctions and superconducting traces. This substitution eliminates bulky mechanical components while achieving the required cryogenic cooling through electrical control of electron tunneling and heat transfer at the quantum level.
Solution Approach 2:
The invention changes the operating parameters by using voltage bias control to regulate heat transfer through the NIS tunnel junctions. By adjusting the voltage applied to the normal metal traces, the system can dynamically control the cooling effect, enabling reliable temperature maintenance without complex mechanical regulation systems.
2Temperature
If traditional vapor compression coolers are used, then cooling is provided, but cost increases
Solution Approach 1:
The patent achieves cryogenic temperature maintenance through electrical parameter control (voltage bias) rather than mechanical parameter adjustment. This approach significantly reduces manufacturing costs by eliminating expensive mechanical components, precision machining requirements, and complex assembly processes associated with traditional vapor compression systems.
3Reliability
If additional cooling structures are added to improve cooling, then cooling capacity increases, but device complexity increases
Solution Approach 1:
The patent merges the cooling function directly into the quantum device substrate by integrating NIS tunnel junctions and superconducting traces with the qubit architecture. This consolidation eliminates the need for separate, additional cooling structures while maintaining high cooling efficiency through direct thermal coupling at the quantum device level.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides reliable and efficient cooling for quantum devices, reducing the need for additional cooling structures and improving overall reliability, enabling stable operation at cryogenic temperatures.
Implementation Method 1
an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces
Implementation Method 2
a superconducting layer, and an insulator layer between the non-superconducting layer and the superconductor layer
Data Source
AI summary
An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.