Nitric Acid Stabilized Polysiloxane Underlayer Film

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Solution Overview

Problem

Polysiloxane solutions used in semiconductor manufacturing often contain high levels of ionic impurities, which are difficult to remove and can cause instability due to reactions with polar filters, leading to gelation and increased molecular weight, and volatile catalysts like hydrochloric acid can be removed but result in instability during filtration.

Innovation Solution

A polysiloxane solution with a specific amount of nitric acid is used, which remains stable when filtered through a polar group-containing filter, utilizing a hydrolysis condensate of hydrolyzable silane and nitric acid ions, and optionally including additional hydrolyzable silanes and additives like water or photoacid generators.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If filtration is performed using a polar group-containing filter to remove ionic impurities, then purity is improved, but the polysiloxane becomes unstable and gelation occurs

Engineering Contradiction:
Improveionic impurity contentVSAvoidsolution stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent changes the chemical parameter by introducing nitric acid into the polysiloxane solution. This parameter change modifies the solution's properties to prevent unwanted reactions with the polar filter, allowing filtration to proceed without gelation while still removing ionic impurities effectively.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

Nitric acid acts as an intermediary substance that mediates between the polysiloxane and the polar filter. It prevents direct harmful interactions between the polysiloxane and filter material, enabling the filtration process to occur smoothly without causing instability or gelation.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Speed

If a volatile catalyst like hydrochloric acid is used for hydrolysis, then reaction speed is improved, but the polysiloxane becomes unstable during filtration

Engineering Contradiction:
Improvehydrolysis reaction rateVSAvoidfiltration stability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes the catalyst parameter from volatile hydrochloric acid to nitric acid. This substitution maintains the hydrolysis reaction efficiency while eliminating the instability problem during filtration, as nitric acid does not cause gelation with polar filters.

Inventive Principle:
Principle #35Parameter changes

3Strength

If polysiloxane solution with high polarity is used to improve adhesion, then adhesion is improved, but ionic impurities increase and become difficult to remove

Engineering Contradiction:
ImproveadhesionVSAvoidionic impurity content
Core Design Contradiction:
StrengthVSQuantity of substance

Solution Approach 1:

The patent introduces nitric acid as a parameter change that enables effective removal of ionic impurities from high-polarity polysiloxane solutions. This allows the solution to maintain high adhesion properties while the nitric acid facilitates the filtration process to remove impurities without causing gelation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution forms a stable resist underlayer film that maintains its properties during filtration and etching, improving adhesion and preventing pattern collapse, and enhances lithographic characteristics by controlling the etching rate and reducing scum formation during development.

Implementation Method 1

a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane... wherein the hydrolyzable silane (a) contains a hydrolyzable silane of Formula (1)

Methodology Applied
Scientific EffectHydrolysis: Hydrolysis

Implementation Method 2

the polysiloxane solution may be subjected to filtration with a filter containing a polar group

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentUS20210018840A1Silicon-containing resist underlayer film-forming composition which contains protected phenolic group and nitric acid
Publication Date: 2021.01.21 NISSAN CHEM CORP
  • US20210018840A1 patent drawing
  • US20210018840A1 patent drawing
  • US20210018840A1 patent drawing

AI summary

A resist underlayer film-forming composition for lithography can produce a semiconductor device; specifically, for forming a resist underlayer film that can be used as a hard mask. It includes a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane, nitric acid ions, and a solvent, wherein the hydrolyzable silane (a) contains a hydrolyzable silane of the following Formula (1):R1aR2bSi(R3)4-(a+b)  Formula (1)[wherein R1 is an organic group of the following Formula (2):and is bonded to a silicon atom via an Si—C bond]. The composition may further include the hydrolyzable silane (a) and/or a hydrolysate (b) thereof. The amount of the nitric acid ions may fall within a range of 1 ppm to 1,000 ppm. In the hydrolysis condensate (c), the functional group of Formula (2) in the hydrolyzable silane of Formula (1) may satisfy a (hydrogen atom)/(hydrogen atom+R5 group) ratio by mole of 1% to 100%.