Nitride Semiconductor Amplifier SiC-Si Hybrid Substrate Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
MMIC amplifiers with nitride-based semiconductor layers on SiC substrates have low capacitor breakdown voltages and are expensive, while those on Si substrates suffer from insufficient heat dissipation, and existing high-frequency modules face challenges with bias-jump during high-temperature operations.
Innovation Solution
A high-frequency semiconductor amplifier design that uses Si substrates for input and output circuits, incorporating DC blocking and grounded capacitors with Si oxide or nitride films, and a nitride-based semiconductor element, which enhances capacitor breakdown voltage and heat dissipation without the need for expensive SiC or diamond substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitride-based semiconductor layer is formed on SiC substrate, then capacitor breakdown voltage is improved, but manufacturing cost increases and heat dissipation is insufficient
Solution Approach 1:
The patent divides the amplifier into two separate parts: the semiconductor element (which generates heat) is kept on the SiC substrate, while the input/output circuits are transferred to a separate Si substrate. This segmentation allows each substrate to be optimized for its specific function - SiC for high breakdown voltage and Si for cost-effective mass production and heat dissipation.
Solution Approach 2:
The patent introduces a bonding substrate as an intermediary component to connect the SiC-based semiconductor element with the Si-based input/output circuits. This bonding substrate acts as a mediator that enables the combination of two different substrate technologies, allowing the system to achieve both high breakdown voltage and cost-effectiveness.
2Ease of manufacture
If nitride-based semiconductor layer is formed on Si substrate, then manufacturing cost is reduced, but heat dissipation performance becomes insufficient
Solution Approach 1:
The patent separates the heat-generating semiconductor element from the heat-sensitive input/output circuits by placing them on different substrates. The SiC substrate retains the element for its superior thermal conductivity, while the Si substrate hosts the circuits for cost-effective manufacturing.
3Volume of moving object
If MMIC amplifier is used for miniaturization, then device size is reduced, but capacitor breakdown voltage and heat dissipation become insufficient
Solution Approach 1:
The patent separates the semiconductor element from the input/output circuits onto different substrates, allowing the element to be optimized for high breakdown voltage on SiC while maintaining compact overall device size through the bonding substrate integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves high heat dissipation performance, increased capacitor breakdown voltage, and reduced costs by utilizing Si substrates for the amplifier circuits and nitride-based semiconductor elements, enabling efficient and cost-effective high-frequency amplification.
Implementation Method 1
a first DC blocking capacitor (27) connected between the first region (22a) and the second region (22b) of the input transmission line (22)
Implementation Method 2
The first bias circuit (26) includes a first grounded capacitor (24) and a first transmission line (25) connected to the first grounded capacitor (24)
Implementation Method 3
A high frequency semiconductor amplifier includes an input circuit, an output circuit, a first semiconductor element (40), and a package (PK)
Data Source
Figure 1A~1B
Figure 2A~2B
Figure 3A~3B
AI summary
A high frequency semiconductor amplifier includes an input circuit (20), an output circuit (30), a first semiconductor element (40), and a package. The input circuit (20) includes a first DC blocking capacitor (27), an input transmission line (22), a first input pad part (23) connected to the input transmission line (22), and a first bias circuit (26). The output circuit (30) includes a first output pad part (33), a second DC blocking capacitor (37), an output transmission line (32), and a second bias circuit (36). The first semiconductor element (40) includes a nitride-based semiconductor layer and is arranged between the input circuit (20) and the output circuit (30). The first semiconductor element (40), the input circuit (20) and the output circuit are bonded to the package. The first bias circuit (26) includes a first grounded capacitor (24) and a first transmission line (25). The second bias circuit (36) includes a second grounded capacitor (34) and a second transmission line (35).