Group-13 Nitride Bonded Substrate With High-Temperature Adhesion
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Solution Overview
Problem
The existing bonded substrates of group-13 nitride crystal substrates and support substrates face issues with low adhesion and bonding strength, leading to separation during high-temperature processing, such as in MOCVD processes.
Innovation Solution
Incorporating transition metal elements like zinc, iron, manganese, and chromium into the group-13 nitride crystal substrate at specific concentrations (1×10^17 to 1×10^21 atoms/cm^-3) to enhance bonding strength, suppressing separation under stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the group-13 nitride crystal substrate and support substrate are directly bonded, then the structure is simple, but the bonding strength is low and separation occurs during high-temperature processing
Solution Approach 1:
The patent introduces a bonding layer as an intermediary between the group-13 nitride crystal substrate and the support substrate. This bonding layer comprises a first region and a second region with different compositions and properties, serving as a mediator that achieves strong bonding to both substrates while preventing direct contact between the nitride substrate and support substrate, thereby solving the low bonding strength problem of direct bonding.
Solution Approach 2:
The bonding layer is constructed as a composite material with two distinct regions: a first region containing a first material and a second region containing a second material. This composite structure allows each region to be optimized for different functions - one region for bonding to the nitride substrate and the other for bonding to the support substrate, achieving overall strong bonding that neither single material could provide alone.
2Productivity
If high temperature is applied during MOCVD processing, then the epitaxial layer is formed, but the group-13 nitride crystal substrate and support substrate separate due to insufficient adhesion
Solution Approach 1:
The bonding layer is prepared in advance before the high-temperature MOCVD process. By pre-establishing this intermediate layer with appropriate material properties and structure, the system is prepared to withstand the thermal stresses and adhesion challenges that will occur during subsequent high-temperature epitaxial growth, preventing separation before it can occur.
Data Source
AI summary
It is provided a bonded substrate of a support substrate and group-13 nitride crystal substrate. The group-13 nitride crystal substrate comprises one or more transition metal elements selected from the group consisting of zinc, iron, manganese, nickel and chromium in a concentration of 1×1017 atoms·cm−3 or higher and 1×1021 atoms·cm−3 or lower.