Group III Nitride Semiconductor Buffer Layer Lattice Mismatch
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Solution Overview
Problem
The challenge in producing group III nitride semiconductor light-emitting devices is the difficulty in achieving high crystallinity and uniformity due to large lattice mismatches between the substrate and the semiconductor layer, leading to decreased density and crystallinity, especially when using buffer layers like aluminum nitride or aluminum gallium nitride.
Innovation Solution
A method involving pretreatment of the substrate with plasma to match the crystal lattice structure, followed by forming a buffer layer of AlxGa1-xN using plasma activation and reacting metal gallium with a group V element, such as nitrogen, to create a stable and uniform buffer layer for growing high-crystallinity semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a low-temperature buffer layer made of aluminum nitride or aluminum gallium nitride is laminated on the substrate by sputtering method, then the substrate can be prepared for epitaxial growth, but the density and crystallinity of the crystal are decreased
Solution Approach 1:
The invention changes the formation parameters of the buffer layer by using plasma activation and reacting metal gallium with group V element gas at low temperature (room temperature to 500°C), instead of conventional sputtering methods. This parameter change enables the formation of a buffer layer with high crystallinity that serves as an effective template for high-quality crystal growth.
Solution Approach 2:
The invention replaces the mechanical sputtering process with a chemical reaction process using plasma activation. Instead of physically depositing material through ion bombardment, the method uses plasma to activate metal gallium and react it with group V element gas, forming a buffer layer with superior crystalline structure.
2Adaptability or versatility
If there is a large lattice mismatch between the substrate and the group III nitride semiconductor crystal, then the substrate can be used for growth, but the density and crystallinity of the crystal are decreased
Solution Approach 1:
The invention introduces a buffer layer as an intermediary between the substrate and the group III nitride semiconductor crystal. This buffer layer, formed by plasma activation and chemical reaction, serves as a transition layer that reduces the lattice mismatch effect, enabling high-quality crystal growth on substrates with different lattice structures.
Solution Approach 2:
The invention changes the formation conditions of the buffer layer to low temperature (room temperature to 500°C) using plasma activation and chemical reaction, creating a buffer layer with specific crystalline properties that effectively bridge the lattice mismatch between substrate and semiconductor crystal.
3Ease of manufacture
If conventional sputtering method is used to form the buffer layer, then the buffer layer can be formed on the substrate, but the crystallinity of the gallium nitride-based compound semiconductor cannot be improved
Solution Approach 1:
The invention replaces the conventional sputtering method with a plasma activation and chemical reaction process. This substitution transforms the buffer layer formation mechanism from physical deposition to chemical synthesis, resulting in a buffer layer that significantly improves the crystallinity of the subsequent gallium nitride-based compound semiconductor layer.
Solution Approach 2:
The invention changes the buffer layer formation parameters by using plasma activation and chemical reaction at low temperature (room temperature to 500°C), instead of high-temperature sputtering. This parameter change enables the formation of a buffer layer with superior crystalline structure that promotes high-quality semiconductor crystal growth.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the growth of group III nitride semiconductors with excellent crystallinity and light-emitting properties, improving productivity and reducing lattice mismatch issues, resulting in high-efficiency light-emitting devices.
Implementation Method 1
forming a buffer layer of AlxGa1-xN by plasma activation and reacting metal gallium with a group V element
Implementation Method 2
reacting metal gallium with a group V element, such as nitrogen, to create a stable and uniform buffer layer
Implementation Method 3
the group III nitride semiconductor crystal is epitaxially grown on the low temperature buffer layer
Data Source
AI summary
One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x<1) is formed on the pretreated substrate (11) by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer (14a) is formed on the buffer layer (12).