Nitride Layer Structure With Pit-Filled Buffer for Low Dislocation Growth
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Solution Overview
Problem
Existing nitride structures in semiconductor devices face challenges in achieving improved characteristics such as reduced dislocation density and high crystallinity.
Innovation Solution
A nitride structure comprising a first stacked body with pits filled by an intermediate layer, a second stacked body without pits or with lower pit density, and an intermediate layer of Alz1Ga1-z1N between the two stacked bodies, which reduces dislocation density and enhances crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional nitride structure is used, then the device can be manufactured with standard processes, but the dislocation density remains high and crystallinity is insufficient
Solution Approach 1:
The nitride structure is divided into multiple stacked bodies (first stacked body, intermediate layer, second stacked body) with distinct functions. The first stacked body contains pits that are filled with the intermediate layer, creating a segmented structure that isolates dislocations in the first stacked body from the second stacked body, thereby improving crystallinity and reducing dislocation density in the active region.
Solution Approach 2:
The intermediate layer acts as a mediator between the first stacked body and the second stacked body. It fills the pits in the first stacked body and provides a buffer that prevents dislocation propagation from the first stacked body to the second stacked body, thus improving the overall crystallinity and reducing dislocation density in the device active region.
2Reliability
If the first stacked body contains pits to reduce dislocation density, then dislocation density is reduced, but the structural complexity increases
Solution Approach 1:
The structure is segmented into distinct functional regions: the first stacked body with pits for dislocation management, the intermediate layer for buffering and filling, and the second stacked body for active device operation. This segmentation allows each region to perform its specific function efficiently while maintaining overall structural organization.
Solution Approach 2:
The pits are localized specifically in the first stacked body where they are needed for dislocation management, while the second stacked body maintains a simpler structure optimized for device operation. The intermediate layer is selectively positioned to fill only the pits, providing local quality improvement without unnecessary complexity throughout the entire structure.
Data Source
AI summary
According to one embodiment, a nitride structure includes a first stacked body, a second stacked body, and an intermediate layer provided between the first stacked body and the second stacked body in a first direction and including Alz1Ga1-z1N (0≤z1≤1). The first stacked body includes a plurality of first films including Alx1Ga1-x1N (0<x1≤1), and a plurality of second films including Alx2Ga1-x2N (0≤x2<1, x2<x1). The second stacked body includes a plurality of third films including Alx3Ga1-x3N (0<x3≤1), and a plurality of fourth films including Alx4Ga1-x4N (0≤x4<1, x4<x3). The first stacked body includes a plurality of pits. A part of the intermediate layer is provided in the plurality of pits.