Nitride Semiconductor Conductive Layer Layout for Gate-Drain Field Control
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Solution Overview
Problem
Existing semiconductor device structures face challenges in controlling the electric field between the gate structure and the drain, particularly in smaller device sizes, due to limitations in controlling the length and position of the conductive layer, which affects device performance in HEMT devices.
Innovation Solution
A semiconductor device structure is designed with a conductive layer disposed between the gate structure and the drain, where the length of the conductive layer is precisely controlled to extend in a specific direction, allowing for enhanced control of the electric field, and is manufactured without the need for a reticle, simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive layer is added to control the electric field between gate and drain, then device performance is improved, but device structure complexity increases
Solution Approach 1:
The conductive layer is merged with existing device structures such as the drain electrode or gate structure, allowing it to control the electric field without being a completely separate component. This integration reduces overall structural complexity while maintaining the performance benefits of electric field control.
Solution Approach 2:
The conductive layer serves multiple functions: it controls the electric field between gate and drain, acts as part of the electrical conduction path, and can be formed using the same deposition processes as other conductive elements in the device. This multi-functionality reduces the need for additional specialized structures.
2Manufacturing precision
If reticles are used to define precise conductive layer patterns, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The conductive layer pattern is defined through self-aligned processes where the layer automatically conforms to underlying structures or previously formed patterns without requiring separate photolithography steps. The deposition process itself creates the desired pattern geometry based on physical constraints and material properties rather than requiring optical patterning.
Solution Approach 2:
Instead of using expensive, precision-reticle systems, the patent employs simpler, less costly deposition masks or direct deposition techniques that create adequate patterns without the need for high-precision optical tools. These simpler patterning methods are sacrificed in precision but eliminate the need for costly reticle infrastructure.
3Productivity
If device size is reduced to improve integration, then productivity is improved, but electric field control becomes more difficult
Solution Approach 1:
The conductive layer is designed with locally optimized properties, such as varying thickness or material composition in different regions, to maintain appropriate electric field control at each location within the miniaturized device. This localized optimization allows precise electric field management even as overall device dimensions are reduced.
Solution Approach 2:
As device dimensions in the planar direction are reduced, the conductive layer utilizes the vertical dimension more effectively, with thickness variations or three-dimensional configurations that provide the necessary electric field control. This transition to three-dimensional structuring compensates for the reduced lateral dimensions.
Data Source
AI summary
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure and a conductive layer. The substrate has a first surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The conductive layer is disposed on the second nitride semiconductor layer. The conductive layer has a first length extending in a first direction substantially parallel to the first surface of the substrate, a second length extending in a second direction substantially perpendicular to the first direction—from a cross section view perspective—wherein the second length is greater than the first length.