Nitride Semiconductor Contact Structure for Low-Resistance Ohmic Junctions
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Solution Overview
Problem
Semiconductor elements using silicon as a material face a trade-off between breakdown voltage and on-resistance, necessitating a material change to achieve higher breakdown voltages and lower on-resistance, and forming metal electrodes with low connection resistance to nitride semiconductors is challenging.
Innovation Solution
A semiconductor device utilizing a nitride semiconductor with a contact structure that includes a second nitride region containing specific elements like magnesium, which forms a metallized nitride layer with low electrical resistance and ohmic junctions to nitride semiconductors, achieved through ion implantation and heat treatment processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used as element material for semiconductor elements, then manufacturing maturity and ease of manufacture are maintained, but breakdown voltage is limited and on-resistance cannot be reduced further
Solution Approach 1:
The patent changes the fundamental material parameter from silicon to nitride semiconductor, which has inherently different electrical properties including higher breakdown voltage and lower on-resistance. This material substitution resolves the performance limitations while the contact structure design addresses the manufacturing challenges through standardized processes.
Solution Approach 2:
The patent employs a composite contact structure comprising multiple layers including metal regions, nitride regions with different conductivity types, and insulating regions. This composite structure optimizes both electrical performance (low on-resistance, high breakdown voltage) and manufacturability by combining materials with complementary properties.
2Ease of manufacture
If metal electrodes are formed directly on nitride semiconductor, then manufacturing process is simplified, but connection resistance is high and junction stability is poor
Solution Approach 1:
The patent segments the contact structure into multiple functional regions: a metal region, a first nitride region with first conductivity type, and a second nitride region with second conductivity type. This segmentation allows each layer to perform its specific function optimally - the first nitride region provides low contact resistance, while the second nitride region maintains device performance - without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a highly reliable metal electrode with low connection resistance, improved junction stability, and enhanced selection of metal electrode materials, addressing the trade-off limitations of silicon-based semiconductors.
Implementation Method 1
achieved through ion implantation and heat treatment processes
Implementation Method 2
achieved through ion implantation and heat treatment processes
Data Source
AI summary
A semiconductor device of an embodiment includes a first nitride region being nitride selected from aluminum gallium nitride and aluminum nitride, the first nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region, the second gallium nitride region being the nitride, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.