Nitride Semiconductor Contacts With Dielectric Defect Buffer
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Solution Overview
Problem
In the manufacturing of nitride semiconductor devices, surface defects and damages can lead to dangling bonds, affecting the efficiency of the device due to suboptimal ohmic and Schottky contacts.
Innovation Solution
A dielectric layer is introduced between the metal layers and the nitride semiconductor layers to improve contact quality by reducing surface defects and enhancing the smoothness of the semiconductor surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal layer is directly formed on the nitride semiconductor layer, then the manufacturing process is simple, but surface defects cause dangling bonds and poor contact quality
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the metal layer and the nitride semiconductor layer. This dielectric layer serves as a mediator that prevents direct contact between the metal and defective semiconductor surfaces, thereby eliminating dangling bonds and improving contact quality while maintaining a manageable layer structure.
2Reliability
If the dielectric layer thickness is increased to improve coverage, then surface defects are better covered, but the contact efficiency decreases
Solution Approach 1:
The thickness of the dielectric layer is precisely controlled within a specific range (1 nm to 2 nm). By optimizing this critical parameter, the dielectric layer achieves sufficient coverage to protect against surface defects while remaining thin enough to maintain effective electrical contact efficiency between the metal and semiconductor layers.
Data Source
AI summary
Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first metal layer is disposed in the second nitride semiconductor layer. The second metal layer is disposed on the second nitride semiconductor layer. The dielectric layer is disposed between the first metal layer and the second nitride semiconductor layer and/or between the second metal layer and the second nitride semiconductor layer.