Nitride Semiconductor Current Blocking Layer With In-Hydrogen Band Gap Control
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Solution Overview
Problem
Existing nitride semiconductor structures for light emitting lasers face challenges in maintaining stable characteristics, such as increased threshold, due to insufficient current blocking mechanisms, particularly when distributing regions with different band gaps.
Innovation Solution
A nitride semiconductor structure is designed with a current blocking layer containing Mg as an impurity, featuring regions with varying In compositions and hydrogen atom concentrations, where the second region has a lower In composition and higher hydrogen concentration, creating a higher band gap and electric resistance to effectively block current while confining light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current blocking structure is formed by embedding an n-type semiconductor layer in a p-type semiconductor layer, then current blocking is achieved, but device complexity increases
Solution Approach 1:
The patent changes the chemical composition parameters of the nitride semiconductor layer by controlling In content distribution and hydrogen atom concentration. By creating regions with different In compositions (first region with higher In, second region with lower In) and different hydrogen concentrations (second region with higher H), the band gap is modified to achieve current blocking without adding structural layers, thus resolving the contradiction between reliability and device complexity
Solution Approach 2:
The patent applies local quality by creating spatially differentiated regions within the nitride semiconductor layer. The first region has higher In composition while the second region has lower In composition and higher hydrogen concentration, giving each region different electrical properties. This local differentiation enables current blocking in specific areas without affecting the entire structure, reducing overall complexity while maintaining blocking reliability
2Reliability
If regions with different band gaps are distributed in the plane, then current blocking is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses parameter changes by controlling the In composition and hydrogen concentration during the growth process. By adjusting these parameters to create a specific distribution pattern (first region with higher In, second region with lower In and higher H), the method achieves current blocking while using established semiconductor manufacturing techniques, thereby managing manufacturing precision requirements
Solution Approach 2:
The patent applies preliminary action by pre-planning the composition distribution during the epitaxial growth process. The different In compositions and hydrogen concentrations are incorporated during layer formation rather than requiring subsequent processing steps, which simplifies manufacturing control and reduces precision requirements for later stages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure achieves stable current blocking and efficient light confinement, enhancing the performance of light emitting elements by ensuring selective current flow and effective light emission.
Implementation Method 1
an in-plane distribution of the In composition of the nitride semiconductor layer is formed, and a region having a different band gap is provided in the plane
Implementation Method 2
a hydrogen atom concentration of the second region is higher than a hydrogen atom concentration of the first region by two times or more
Data Source
Figure 1
Figure 2A~2B
Figure 2C
AI summary
A nitride semiconductor structure includes a nitride semiconductor layer containing Mg as an impurity, the nitride semiconductor layer including a first region and a second region surrounding the first region in a plane parallel to the nitride semiconductor layer, wherein an In composition of the second region is less than an In composition of the first region, and wherein a hydrogen atom concentration of the second region is higher than a hydrogen atom concentration of the first region by two times or more.