Nitride Semiconductor Dicing via Substrate Segmentation
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Solution Overview
Problem
The dicing process for semiconductor devices with nitride semiconductor layers faces challenges due to the hardness of nitride semiconductors, leading to increased wear of dicing blades and potential damage to the semiconductor devices, as well as quality deterioration from water infiltration during etching.
Innovation Solution
A semiconductor device manufacturing method involving a substrate with a first region of reduced thickness and a nitride semiconductor layer, where the nitride semiconductor layer is grown on the substrate with a recessed region, and a protective layer is applied to prevent water infiltration, allowing for precise cutting without direct contact with the nitride semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a dicing blade is applied to cut the substrate including the nitride semiconductor layer, then the semiconductor device can be diced from the wafer, but wear of the dicing blade is increased due to the hardness of nitride semiconductor
Solution Approach 1:
The substrate is divided into a first region with reduced thickness and a second region with normal thickness. The nitride semiconductor layer is formed only on the first region, allowing the dicing blade to cut through the thinner first region with less resistance and wear, while the second region provides structural support.
Solution Approach 2:
The substrate has different thickness characteristics in different regions: the first region has reduced thickness where the nitride semiconductor layer is formed, while the second region maintains normal thickness. This local variation in thickness allows optimized dicing conditions for the nitride semiconductor region without compromising overall substrate strength.
2Productivity
If the dicing blade is applied to cut the nitride semiconductor layer, then the semiconductor device can be separated, but the semiconductor device may be destroyed due to mechanical impact
Solution Approach 1:
The substrate is segmented into a first region with reduced thickness and a second region with normal thickness. The nitride semiconductor layer is formed only on the first region, allowing the dicing blade to cut through the thinner first region with less mechanical impact, while the second region provides structural support to prevent device destruction.
Solution Approach 2:
The substrate exhibits local quality variation in thickness: the first region has reduced thickness for easier cutting with minimal mechanical impact on the nitride semiconductor layer, while the second region maintains normal thickness to provide overall structural support and prevent device destruction during dicing.
3Manufacturing precision
If the substrate is etched to expose the nitride semiconductor layer for cutting, then the dicing blade can cut in the etched recess, but water infiltration during cleaning deteriorates the nitride semiconductor quality
Solution Approach 1:
The substrate thickness is reduced in the first region before the nitride semiconductor layer is formed. This preliminary action creates a thinner region that allows precise dicing without requiring etching to expose the nitride semiconductor layer, thereby preventing water infiltration and maintaining nitride semiconductor quality.
Solution Approach 2:
The substrate has local quality variation in thickness, with the first region having reduced thickness where the nitride semiconductor layer is formed. This allows precise dicing cutting in the thinner first region without exposing the nitride semiconductor layer to water infiltration risks during cleaning, while the second region maintains normal thickness for structural support.
Data Source
AI summary
A semiconductor device includes a substrate that includes a first region and a second region adjacent to the first region. The first region has a thickness that is smaller than a thickness of the second region, and a nitride semiconductor layer is provided on the first region of the substrate.