Nitride Semiconductor Dielectric Trench Layout for Crack-Free Singulation
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in achieving reliable singulation of nitride semiconductor devices due to fragile nitride dielectric layers, leading to cracks and reduced device reliability, especially during electrical tests and singulation techniques.
Innovation Solution
A semiconductor device structure is designed with a dielectric layer comprising separate portions separated by a trench, where the trench terminates at the upper surface of the first dielectric layer, allowing for improved singulation without removing the dielectric layer from the recess, thus reducing the risk of cracks and enhancing device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the dielectric layer is removed from the recess before singulation, then the singulation process can be completed, but cracks occur in the fragile nitride dielectric layer reducing device reliability
Solution Approach 1:
The dielectric layer is segmented into two distinct portions: a first portion remaining in the recess and a second portion removed from the recess. This segmentation allows the singulation process to proceed without removing the entire dielectric layer, thereby preventing cracks while enabling successful device separation. The trench structure physically divides the dielectric layer, creating independent regions that can be selectively removed or retained.
2Reliability
If the dielectric layer is kept intact during singulation, then device reliability is maintained, but the singulation process becomes difficult due to the fragile nature of nitride dielectric layers
Solution Approach 1:
Different regions of the dielectric layer are given different qualities or fates: the first portion in the recess is retained to maintain reliability and prevent cracks, while the second portion is removed to facilitate the singulation process. This local differentiation allows the structure to simultaneously achieve both reliability maintenance and manufacturing ease, as each portion serves its specific function.
3Productivity
If traditional singulation techniques are used on intact nitride dielectric layers, then manufacturing steps are reduced, but cracks occur leading to increased manufacturing costs and longer cycle times
Solution Approach 1:
The dielectric layer is pre-segmented into first and second portions through trench formation before the singulation process. This preliminary action of creating the trench and separating the dielectric portions beforehand allows the subsequent singulation to proceed smoothly without causing cracks, thereby maintaining both high productivity and device reliability. The preparatory segmentation prevents the harmful cracking effect during the actual singulation operation.
Data Source
AI summary
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first dielectric layer and a second dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first dielectric layer is disposed on the second nitride semiconductor layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer includes a first portion and a second portion separated from the first portion by a trench, wherein the trench terminates at an upper surface of the first dielectric layer.