Nitride Semiconductor Diode Field Management
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Solution Overview
Problem
In semiconductor devices, a high electric field region forms near the diode when a voltage approaches breakdown resistance, leading to leakage current and potential diode breakage, which existing technologies struggle to prevent effectively.
Innovation Solution
A semiconductor device structure is developed with a stacked body of nitride semiconductor layers and electrodes, including a p-type impurity layer to compensate for unintentional n-type impurity regions, preventing high electric field formation and diode breakage by managing the electric field distribution through p-type impurity implantation and deposition regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Schottky barrier junction is formed between a Schottky electrode and an n-type nitride semiconductor layer, then a diode can be formed for rectification, but a high electric field region forms near the diode when voltage approaches breakdown resistance, causing leakage current and potential diode breakage
Solution Approach 1:
A p-type nitride semiconductor layer is introduced as an intermediary between the n-type nitride semiconductor layers. This intermediate layer acts as a mediator to manage the electric field distribution, preventing the formation of high electric field regions that would otherwise cause leakage current and diode breakdown, thereby protecting the diode while maintaining its rectification function
Solution Approach 2:
The electric field distribution parameter is changed by introducing the p-type nitride semiconductor layer with different electrical properties. This layer modifies the electric field characteristics in the diode region, transforming the harmful high electric field concentration into a more distributed and manageable field pattern that prevents breakdown
2Reliability
If a p-type nitride semiconductor layer is introduced between n-type layers to manage electric field distribution, then high electric field regions are suppressed and diode breakage is prevented, but the device structure becomes more complex with additional layers and grooves
Solution Approach 1:
The semiconductor structure is segmented into distinct functional layers (n-type layers for conduction, p-type layer for electric field management) separated by grooves. This segmentation allows each layer to perform its specific function independently while working together as an integrated system, making the complex structure more manageable and manufacturable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure effectively suppresses high electric field regions and prevents diode breakage, ensuring reliable operation by quickly stopping conduction in parasitic bipolar transistors and maintaining device integrity.
Implementation Method 1
The Schottky electrode is formed on a surface of the second groove, makes a Schottky barrier junction with the third nitride semiconductor layer
Implementation Method 2
a p-type impurity layer to compensate for unintentional n-type impurity regions, preventing high electric field formation and diode breakage by managing the electric field distribution
Data Source
AI summary
To suppress breakage of a diode. A semiconductor device comprises a stacked body and a first electrode. The stacked body includes a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, and a fourth nitride semiconductor layer that are stacked in sequence. The first electrode is in contact with a surface of the first nitride semiconductor layer that is opposite to a surface in contact with the second nitride semiconductor layer. The semiconductor device includes a transistor forming region and a diode forming region adjacent to the transistor forming region. The transistor forming region includes a first groove, a second electrode, and a third electrode. The first groove has a bottom portion located in the second nitride semiconductor layer. The second electrode is formed on a surface of the first groove. The third electrode is in contact with a surface of the fourth nitride semiconductor layer that is opposite to a surface in contact with the third nitride semiconductor layer. The diode forming region includes a second groove and a Schottky electrode. The second groove has a bottom portion located in the third nitride semiconductor layer. The Schottky electrode makes a Schottky barrier junction with the third nitride semiconductor layer and is electrically connected to the third electrode.