Nitride Semiconductor Drift Region Ion Implantation for Breakdown Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face issues with breakdown phenomena due to strong peak electric fields near the gate electrode, which are exacerbated by the use of multiple field plates that introduce unwanted parasitic capacitances, limiting operating frequency and degrading electrical properties.
Innovation Solution
Implanting negatively-charged ions from a highly electronegative group into the nitride-based semiconductor layer to modify the electric field distribution, thereby suppressing breakdown without the need for multiple field plates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple field plates are used to suppress breakdown, then breakdown resistance is improved, but parasitic capacitance increases and operating frequency decreases
Solution Approach 1:
The patent extracts the essential function of field plates (electric field modulation) and implements it through a simplified structure: a single gate electrode combined with doped regions in the nitride-based semiconductor layer. This eliminates the need for multiple field plates while maintaining breakdown suppression capability.
Solution Approach 2:
The patent changes the doping concentration parameters in the nitride-based semiconductor layer to achieve electric field modulation. By adjusting dopant concentration in specific regions, the device suppresses breakdown phenomena without requiring additional field plate structures.
2Reliability
If multiple field plates are used to suppress breakdown, then breakdown resistance is improved, but operating frequency is reduced due to parasitic capacitance
Solution Approach 1:
The patent removes the unnecessary field plate structures that introduce parasitic capacitance, retaining only the essential gate electrode and doped regions. This extraction reduces parasitic capacitance and enables higher operating frequencies while maintaining breakdown suppression through doping-induced electric field modulation.
3Reliability
If multiple field plates are used, then breakdown suppression is achieved, but device structure becomes more complex
Solution Approach 1:
The patent merges the functions of multiple field plates into a unified structure consisting of a single gate electrode and doped regions in the semiconductor layer. This consolidation achieves breakdown suppression through coordinated action of the gate and doped regions, eliminating structural complexity while maintaining reliability.
4Reliability
If dopant concentration is increased in the second nitride-based semiconductor layer, then electric field distribution is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating doped regions with specific doping concentrations in particular areas of the nitride-based semiconductor layer, rather than uniform doping throughout. This localized doping approach optimizes electric field distribution in critical regions while providing manufacturing flexibility through selective area doping techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified electric field distribution enhances the semiconductor device's performance by reducing peak electric field intensity, maintaining a normally-off state, and improving reliability without the complexity of multiple field plates.
Implementation Method 1
Implanting negatively-charged ions from a highly electronegative group into the nitride-based semiconductor layer to modify the electric field distribution
Data Source
AI summary
A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a group of negatively-charged ions. The gate electrode is located between the source and drain electrodes to define a drift region between the gate and drain electrodes. A group of negatively-charged ions are implanted into the drift region and over the 2DEG region and spaced apart from the gate and drain electrodes and spaced apart from an area directly beneath the gate and drain electrodes. The gate electrode is closer to the negatively-charged ions than the drain electrode, such that the negatively-charged ions deplete at least one portion of the 2DEG region which is near the gate electrode.