Nitride Light Emitting Element Insulative Film for Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing light emitting elements in display devices suffer from inefficiencies that affect display quality.
Innovation Solution
A light emitting element design incorporating a nitrogen-containing Group IV element oxide insulative film with specific atomic ratios of nitrogen, carbon, and oxygen, applied through atomic layer deposition, to enhance the efficiency by suppressing nitrogen vacancies and maintaining low conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulative film is used to cover the light emitting stack member, then the insulative property is provided, but nitrogen vacancies occur at the interface causing increased leakage current and reduced efficiency
Solution Approach 1:
The patent changes the compositional parameters of the insulative film by incorporating nitrogen-containing Group IV element oxide with specific atomic ratios (nitrogen:Group IV element = 0.1:1 to 1:1). This compositional parameter change enables the film to suppress nitrogen vacancy formation at the interface with semiconductor layers while maintaining insulative properties, thereby reducing leakage current and improving light emitting efficiency.
Solution Approach 2:
The patent uses a composite material approach by creating an insulative film that combines Group IV element oxide with nitrogen-containing compounds. This composite structure provides both the insulative function and the nitrogen supply capability to prevent nitrogen vacancies, resolving the contradiction between providing insulation and preventing harmful nitrogen vacancy formation.
2Reliability
If the insulative film is made more conductive to reduce contact resistance, then electrical contact is improved, but leakage current increases due to nitrogen vacancies
Solution Approach 1:
The patent optimizes the compositional parameters of the insulative film by controlling the nitrogen content and Group IV element ratio. This parameter optimization allows the film to maintain appropriate electrical conductivity for good contact while simultaneously suppressing nitrogen vacancy formation that causes leakage current, thus resolving the contradiction between electrical contact quality and leakage current reduction.
3Manufacturing precision
If atomic layer deposition is used to form the insulative film with precise composition, then film quality and uniformity are improved, but manufacturing complexity increases
Solution Approach 1:
The patent specifies precise compositional parameters (nitrogen:Group IV element atomic ratio of 0.1:1 to 1:1) that can be achieved through atomic layer deposition. While ALD is a complex process, the well-defined parameter ranges provided in the patent enable controlled reproduction of the optimal composition, balancing manufacturing precision requirements with process complexity through clear specification of target parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the efficiency of light emitting elements by preventing nitrogen vacancy formation and reducing leakage currents, thereby enhancing display quality.
Implementation Method 1
the first insulative film includes a nitrogen-containing Group IV element oxide... preventing nitrogen vacancy formation
Implementation Method 2
The first insulative film may be formed through an atomic layer deposition process
Data Source
AI summary
Provided is a light emitting element including: a light emitting stack member including a first semiconductor layer including a metal nitride doped with a dopant having a first conductivity type, a second semiconductor layer including a metal nitride doped with a dopant having a second conductivity type opposite to the first conductivity type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and a first insulative film covering at least a portion of an outer circumferential surface of the light emitting stack member. The first insulative film includes a nitrogen-containing Group IV element oxide. In the nitrogen-containing Group IV element oxide, a content ratio of nitrogen:Group IV element is in a range of about 0.1:1 and about 1:1, based on a unit (atomic %).