Nitride Semiconductor Layout for Fast Temperature Sensing
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Solution Overview
Problem
Conventional semiconductor device structures with external temperature sensitive components face challenges in accurately measuring device temperature due to heat transmission along lengthy conductive paths, leading to delayed detection of overheating and potential adverse effects on electric parameters.
Innovation Solution
Integration of a temperature sensitive component within the semiconductor device structure, positioned between the gate structure and electrodes, allowing for precise temperature measurement with minimal heat conduction distance and electrical isolation to maintain intact electric parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If temperature sensitive component is placed externally to the semiconductor device structure, then the device structure is simpler to manufacture, but the heat transmission path becomes lengthy causing delayed temperature detection
Solution Approach 1:
The temperature sensitive component is merged with the semiconductor device structure by integrating it within the same package and placing it in close proximity to the active components (transistor, diode, or HBT). This integration ensures that the temperature sensor is positioned near the heat-generating elements, thereby minimizing the heat transmission path and enabling timely temperature detection while maintaining manufacturing simplicity through a unified structure.
2Measurement precision
If temperature sensitive component is placed close to the active components for accurate temperature sensing, then temperature detection accuracy improves, but the electric parameters may be perturbed by the component
Solution Approach 1:
An insulating layer is introduced as an intermediary between the temperature sensitive component and the active components (transistor, diode, or HBT). This insulating layer serves as a thermal conductor to transmit heat from the active components to the temperature sensor, while simultaneously providing electrical isolation to prevent perturbation of the electric parameters. This mediator enables close proximity placement for accurate temperature sensing without compromising the reliability of the electric parameters.
3Loss of time
If temperature sensitive component is integrated within the device structure, then heat conduction distance is minimized for timely detection, but the device complexity increases
Solution Approach 1:
The temperature sensitive component is designed with multi-functionality to reduce overall device complexity. It serves not only as a temperature sensor but also incorporates electrical isolation functionality through the insulating layer, and potentially serves as part of the packaging structure. This multi-functional approach minimizes the need for separate components and simplifies the overall device structure while maintaining the benefit of integrated temperature sensing with minimal heat conduction distance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables timely shutdown of the semiconductor device to prevent overheating and ensures accurate temperature sensing without perturbing the electric field, maintaining the integrity of electric parameters.
Implementation Method 1
the temperature sensitive component is disposed between the second electrode and the first metal layer along a second direction substantial vertical to the interface of the first nitride semiconductor layer and the second nitride semiconductor layer
Implementation Method 2
a first nitride semiconductor layer, a second nitride semiconductor layer... The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer
Data Source
AI summary
The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer. The second electrode is disposed on the second nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer and between the first electrode and the second electrode. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.