Nitride Semiconductor Field Plate Layout for Breakdown Control
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Solution Overview
Problem
Semiconductor circuit elements, such as transistors and diodes, face a tradeoff between breakdown voltage and on-state resistance, with silicon-based materials nearing their limits, and even nitride semiconductors with field plate electrodes can experience electric field concentration issues leading to interlayer insulating film breakdown.
Innovation Solution
A semiconductor device design incorporating a first and second nitride semiconductor layer with a gate field plate electrode and additional field plate electrodes, where the distance from the nitride semiconductor layer to the field plate electrodes is strategically shorter than to the gate field plate electrode, effectively reducing electric field concentration and enhancing breakdown voltage while decreasing on-state resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitride semiconductors are used to improve breakdown voltage and decrease on-state resistance, then the tradeoff relationship between breakdown voltage and on-state resistance is improved, but electric field concentration may still cause interlayer insulating film breakdown
Solution Approach 1:
A field plate electrode is introduced as an intermediary component between the gate electrode and the drain electrode. This field plate electrode serves as a mediator to redistribute and reduce electric field concentration in the high electric field region, preventing interlayer insulating film breakdown while maintaining the high breakdown voltage characteristics of nitride semiconductors
Solution Approach 2:
The field plate electrode extends in the horizontal direction (parallel to the substrate surface) rather than only in the vertical direction. This dimensional extension allows the electric field to be distributed over a larger area, reducing electric field concentration at critical points while maintaining effective gate control
2Object-affected harmful factors
If field plate electrodes are added to reduce electric field concentration, then electric field distribution is improved, but device structure becomes more complex
Solution Approach 1:
The field plate electrode is merged with the existing gate electrode structure, forming an integrated gate field plate assembly. This merging approach allows the field plate function to be added without completely redesigning the gate structure, thereby reducing the increase in device complexity while still achieving electric field concentration reduction
Data Source
AI summary
A semiconductor device has a first and a second nitride semiconductor layer and a first and a second electrode thereon. A gate electrode is between the first and second electrodes. A gate field plate is on the gate electrode. A first field plate is above a position between the gate field plate and the second electrode. A second field plate is between the first field plate and the gate field plate. A distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to the portion of the gate field plate that protrudes the most towards the second electrode. The distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to an end surface of the first field plate on a first electrode side.