Nitride Semiconductor Field Plate Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
The complexity of manufacturing nitride-based semiconductor devices with multiple field plates leads to reliability issues and increased manufacturing costs due to complexity and parasitic capacitances, which affect the uniformity of electric field distribution and operating frequency.
Innovation Solution
A semiconductor device design incorporating a single field plate in collaboration with an air gap, which reduces the complexity of the manufacturing process, minimizes etching damage, and enhances electric field uniformity, thereby improving reliability and reducing parasitic capacitances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If multiple field plates are used to split the electric field, then the electric field distribution uniformity is improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent divides the field plate structure into multiple segments (first field plate, second field plate, third field plate) positioned at different locations. This segmentation allows the electric field to be distributed more uniformly across the device while maintaining a manageable manufacturing complexity through modular structure design
Solution Approach 2:
The patent combines multiple field plates with a common base structure and integrates them into a unified gate electrode assembly. This merging approach maintains the electric field distribution benefits of multiple plates while reducing overall structural complexity and simplifying the manufacturing process
2Stability of the object's composition
If multiple field plates are used to split the electric field, then the electric field distribution uniformity is improved, but the manufacturing cost increases
Solution Approach 1:
The field plate structure is segmented into multiple functional parts that can be manufactured separately and then assembled, allowing for optimized production processes and reduced manufacturing costs while achieving uniform electric field distribution
Solution Approach 2:
The base structure supporting the multiple field plates is designed to serve multiple functions: providing mechanical support, enabling electrical connections, and facilitating the segmented configuration. This multi-functionality reduces the need for additional components and lowers manufacturing costs
3Stability of the object's composition
If excessive numbers of field plates are used, then the electric field distribution is improved, but parasitic capacitances increase affecting operating frequency
Solution Approach 1:
The field plates are segmented and positioned strategically rather than continuously, which distributes the electric field effectively while minimizing the total conductive material present, thereby reducing parasitic capacitances
Solution Approach 2:
Field plates are placed only in specific locations where electric field control is most needed, rather than uniformly across the entire device. This localized approach achieves the necessary field distribution uniformity while minimizing unnecessary conductive structures that would generate parasitic capacitance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration of a single field plate with an air gap simplifies the manufacturing process, reduces manufacturing costs, enhances electrical properties, and increases the operating frequency of the semiconductor device by achieving a more uniform electric field distribution and reducing parasitic capacitances.
Implementation Method 1
excessive numbers of field plates may induce unwanted parasitic/stray capacitances affecting the operating frequency of the device
Implementation Method 2
one approach to lower the peak of the electric field is to utilize multiple field plates to split the electric field into more peaks so as to achieve a more uniform electric field distribution
Data Source
AI summary
A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode and a drain electrode, a gate structure, a passivation layer and a field plate. The passivation layer is disposed above the second nitride-based semiconductor layer and covers the gate structure and has an enclosed air gap between the gate structure and the drain electrode. The field plate is disposed above the passivation layer and has a first portion directly over the gate structure and a second portion directly over the air gap. The second portion is separated from the air gap by at least one dielectric of the passivation layer.