Nitride Semiconductor Field Plate Layout Without Conductive Pillars
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Solution Overview
Problem
Existing nitride-based semiconductor devices face challenges in manufacturing complexity and reliability due to the need for separate conductive pillars between field plates, which can lead to parasitic currents and reduced electrical uniformity.
Innovation Solution
A configuration where two field plates are directly connected, with one plate overlapping and extending downward to make contact with the other, eliminating the need for extra conductive pillars and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate conductive pillars are used to connect field plates, then electrical connectivity between field plates is achieved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the field plate connection function directly into the field plate structure itself. The first field plate extends downward to directly contact the second field plate, eliminating the need for separate conductive pillars. This integration reduces structural complexity while maintaining electrical connectivity between field plates.
2Reliability
If separate conductive pillars are used to connect field plates, then electrical connectivity is established, but manufacturing process becomes more complex
Solution Approach 1:
The field plate connection structure is merged with the field plate itself, allowing both field plates to be formed in a single manufacturing step. The first field plate is designed to extend downward and contact the second field plate directly, eliminating the need for separate pillar formation processes and simplifying the overall manufacturing flow.
3Reliability
If extra conductive pillars are added between field plates, then connectivity is improved, but parasitic currents increase
Solution Approach 1:
The patent extracts and eliminates the separate conductive pillar element from the structure. By removing this intermediate component and allowing direct contact between field plates through the extended first field plate, the source of parasitic currents is eliminated while maintaining necessary electrical connectivity.
4Ease of manufacture
If direct contact between field plates is implemented, then manufacturing is simplified, but electrical uniformity may be compromised
Solution Approach 1:
The patent transitions from a lateral connection approach (using separate pillars) to a vertical connection approach. The first field plate extends downward in the vertical dimension to contact the second field plate, maintaining electrical uniformity through controlled vertical positioning while simplifying the manufacturing process.
Data Source
AI summary
The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, an ohmic electrode, a first field plate, and a second field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The gate electrode is disposed above the second nitride-based semiconductor layer. The ohmic electrode is disposed above the second nitride-based semiconductor layer. The first field plate is disposed above the second nitride-based semiconductor layer and between the gate electrode and the ohmic electrode. The second field plate is disposed above the first field plate and vertically overlapping with the first field plate. The second field plate has at least one portion extending downward to make contact with at least one connection region of the first field plate, and an isolation region of the first field plate is wrapped by dielectric.