Group 13 Nitride Films via Pulse Sputtering at Low Temperature
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Solution Overview
Problem
Conventional methods for growing group 13 nitride semiconductors, such as the MOCVD method, face challenges in achieving high-quality films with low impurity concentrations and high electron mobility, especially at high donor concentrations.
Innovation Solution
The use of a pulse sputter deposition (PSD) method to form a sputtered single crystal film at low temperatures, allowing for the incorporation of oxygen as an impurity and achieving high electron mobility even at high electron concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the MOCVD method is used for crystal growth, then high temperature processing (exceeding 1000°C) is achieved, but manufacturing complexity and energy consumption increase
Solution Approach 1:
The patent changes the temperature parameter from high (MOCVD exceeding 1000°C) to low (PSD method below 1000°C) while maintaining film quality. This parameter change resolves the contradiction by achieving the desired crystal growth without the high energy consumption associated with high temperature processing.
2Temperature
If the MBE method is used for crystal growth, then low temperature processing is achieved, but manufacturing area size is limited and cost increases
Solution Approach 1:
The PSD method is designed to be universally applicable for manufacturing compound semiconductor films across various area sizes. Unlike MBE which is limited to small areas, the PSD method can process both small and large substrate areas, making it a multi-functional solution that resolves the area size limitation while maintaining low temperature processing.
3Reliability
If donors are incorporated at high concentration by MBE method, then electrical conductivity is improved, but transparency decreases due to absorption in the forbidden band
Solution Approach 1:
The patent changes the donor concentration parameter to achieve high electrical conductivity while controlling the absorption effect. By using the PSD method with optimized doping parameters, the patent achieves high electron concentration (1×10^20 to 1×10^21 cm^-3) while maintaining film transparency, resolving the contradiction between conductivity and transparency.
4Ease of manufacture
If conventional methods are used for crystal growth, then manufacturing process is established, but electron mobility is insufficient at high donor concentrations
Solution Approach 1:
The patent replaces the conventional MOCVD chemical vapor deposition mechanism with a physical sputtering mechanism. This substitution allows for better control of crystal quality and electron mobility at high donor concentrations. The PSD method's physical deposition process enables achieving electron mobility of 50 cm²/Vs or higher even at high electron concentrations, resolving the contradiction between ease of manufacture and electron mobility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The PSD method enables the production of high-quality group 13 nitride semiconductor films with high electron mobility (50 cm^2/V·s or higher) and low specific resistance, suitable for advanced electronic and optoelectronic devices.
Implementation Method 1
a method for manufacturing a compound semiconductor by pulse-sputtering using a group 13 nitride semiconductor
Data Source
Figure 1
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AI summary
This compound semiconductor constitutes a high-performance semiconductor device by having a high electron concentration of 5×1019 cm-3 or more, and exhibiting an electron mobility of 46 cm2/V·s or more, and low electrical resistance. The present invention provides an n conductivity-type group 13 nitride semiconductor that can be film-formed at a temperature within a range from a room temperature to 700°C on a substrate having a large area.