Nitride Semiconductor Field Plate Structure for Gate-Edge Breakdown Relief
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Nitride-based semiconductor devices face breakdown issues due to strong peak electric fields near the gate edge, which deteriorate electrical properties and reliability, especially under high voltage conditions, limiting their applications.
Innovation Solution
A nitride-based semiconductor device with a doped nitride-based semiconductor layer and a field plate is designed, where the doped layer has protruding portions overlapping with the field plate, modulating the electric field and reducing peak electric field intensity through a reduced surface field structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional nitride-based semiconductor device structure is used, then the device can be manufactured with standard processes, but strong peak electric fields occur near the gate edge causing breakdown phenomena
Solution Approach 1:
A doped nitride-based semiconductor layer is formed in advance between the second nitride-based semiconductor layer and the gate electrode, with protruding portions extending toward the source and drain electrodes. This preliminary structure modification creates a reduced surface field configuration that prevents strong peak electric fields from forming near the gate edge during device operation, thereby reducing breakdown phenomena and improving reliability
Solution Approach 2:
The doped nitride-based semiconductor layer acts as an intermediary structure between the gate electrode and the second nitride-based semiconductor layer. This intermediate layer with specific doping characteristics modifies the electric field distribution, serving as a buffer that reduces the peak electric field strength near the gate edge without directly contacting the gate electrode, thus preventing breakdown while maintaining device functionality
2Object-affected harmful factors
If the doped nitride-based semiconductor layer with protruding portions is added, then the electric field distribution is improved, but the device structure becomes more complex
Solution Approach 1:
The doped nitride-based semiconductor layer is selectively formed with protruding portions that extend locally toward the source and drain electrodes, rather than uniformly across the entire device structure. This localized modification creates the reduced surface field configuration only where needed near the gate edge, improving electric field distribution while minimizing the addition of structural complexity to the overall device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves electric field distribution, enhancing the electrical properties and reliability of the semiconductor device by gradually varying the 2DEG concentration and reducing the strength of surface electric fields, thereby alleviating breakdown phenomena.
Implementation Method 1
The doped nitride-based semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode
Implementation Method 2
modulating the electric field and reducing peak electric field intensity through a reduced surface field structure
Data Source
AI summary
A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a source, a drain and a gate electrode, a doped nitride-based semiconductor layer, and a first field plate. The first field plate disposed over the doped nitride-based semiconductor layer. A vertical projection of the doped nitride-based semiconductor layer on the second nitride-based semiconductor layer overlaps with a vertical projection of the first field plate on the second nitride-based semiconductor layer, and a vertical projection of the gate electrode on the second nitride-based semiconductor layer is physically separated from the vertical projection of the first field plate on the second nitride-based semiconductor layer.