Segmented Gate Electrodes in Nitride Semiconductor Stripes
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Solution Overview
Problem
Narrowbandgap nitride-based semiconductor devices face stress accumulation and short circuit issues due to continuous stripe-shaped gate electrodes, which affect reliability and electrical properties.
Innovation Solution
The gate electrodes are formed in an island structure with multiple separated gate electrodes on a nitride-based layer, reducing stress accumulation and preventing transfer to other device regions by introducing gate discontinuity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If continuous stripe-shaped gate electrodes are used, then the device structure is simple and easy to manufacture, but stress accumulates and short circuit issues occur reducing reliability
Solution Approach 1:
The continuous stripe-shaped gate electrode is divided into multiple separated gate electrodes (first gate electrode and second gate electrode) with a groove between them. This segmentation breaks the stress continuity and prevents stress accumulation, thereby improving device reliability while maintaining manufacturing feasibility through standard photolithography and etching processes.
2Reliability
If continuous stripe-shaped gate electrodes are used, then manufacturing process is simple, but stress accumulates affecting electrical properties
Solution Approach 1:
The gate electrode structure is segmented into separate regions with a groove between them, which relieves stress accumulation and improves electrical properties. The segmentation is achieved through additional etching steps that are compatible with existing manufacturing processes, balancing improved electrical performance with manufacturing complexity.
3Reliability
If separated gate electrodes are used, then stress is relieved and reliability is enhanced, but device structure becomes more complex
Solution Approach 1:
The gate electrode is segmented into separate sections with a groove between them, which relieves stress and enhances reliability. The segmented structure maintains similar overall dimensions and layout to the continuous structure, minimizing increases in device complexity while achieving stress relief benefits.
4Reliability
If separated gate electrodes are used, then stress transfer to other regions is prevented, but manufacturing precision requirements increase
Solution Approach 1:
The gate electrode is segmented with a groove between separate sections, preventing stress transfer to other device regions. The groove dimensions and positioning are controlled through standard photolithography and etching processes, achieving stress isolation without requiring extreme manufacturing precision beyond conventional capabilities.
Data Source
AI summary
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a nitride-based layer, and a plurality of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The nitride-based layer is disposed over the second nitride-based semiconductor layer and extends along a first direction to have a strip profile. The gate electrodes are disposed over the nitride-based layer and arranged along the first direction such that at least two of the gate electrodes are separated from each other.