Nitride Semiconductor Temperature Sensing Near the Gate
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Solution Overview
Problem
Conventional semiconductor device structures with external temperature sensitive components face challenges in accurately measuring device temperature due to heat transmission along lengthy conductive paths, leading to delayed detection of overheating and potential adverse effects on electric parameters.
Innovation Solution
Integration of a temperature sensitive component within the semiconductor device structure, positioned between the gate structure and electrodes, allows for precise temperature measurement with minimal heat conduction distance and electrical isolation to maintain intact electric parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If a temperature sensitive component is placed external to the semiconductor device structure, then the device structure remains simple, but the heat transmission path becomes lengthy causing delayed temperature detection
Solution Approach 1:
The temperature sensitive component is merged with the semiconductor device structure by integrating it within the same device package and placing it in close proximity to the active components. This integration reduces the heat transmission path length, enabling faster temperature detection while maintaining a compact and unified device structure.
2Measurement precision
If a temperature sensitive component is placed close to the gate structure for accurate temperature measurement, then temperature detection accuracy improves, but electric parameters may be perturbed
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the temperature sensitive component and the gate structure. This dielectric layer provides thermal coupling for accurate temperature sensing while simultaneously providing electrical isolation to prevent perturbation of the electric parameters and maintain the integrity of the device's electrical characteristics.
3Manufacturing precision
If the temperature sensitive component is integrated within the device structure, then heat conduction distance is minimized, but the manufacturing process becomes more complex
Solution Approach 1:
The manufacturing process is segmented into distinct stages: first forming the semiconductor device structure, then forming the dielectric layer, and finally forming the temperature sensitive component on the dielectric layer. This segmentation allows each component to be manufactured and positioned independently with precise control, facilitating accurate placement while maintaining manufacturing feasibility through a systematic multi-step process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables timely device shutdown to prevent overheating and ensures accurate temperature reflection without perturbing electric fields, ensuring the semiconductor device operates effectively while maintaining intact electric parameters.
Implementation Method 1
heat transmission along lengthy conductive paths
Implementation Method 2
The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer
Data Source
AI summary
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.