Nitride HEMT Structure With Embedded Diode for 2DEG Control
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Solution Overview
Problem
Current semiconductor devices incorporating high-electron-mobility transistors (HEMTs) and diodes face challenges in optimizing performance due to limitations in bandgap engineering and doping concentrations, which affect the formation and control of two-dimensional electron gases (2DEGs) and the integration of p-n junction diodes.
Innovation Solution
The semiconductor device design includes a doped substrate, a barrier layer with a higher bandgap than the channel layer, and a doped semiconductor structure with different polarities, allowing for the formation of a diode and enabling the control of 2DEGs through a gate electrode, while ensuring the doped semiconductor structure is coplanar with the substrate and non-overlapping with the gate electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier layer with higher bandgap than channel layer is used to form HEMT, then 2DEG formation and electron mobility are improved, but device complexity increases due to multiple layer integration
Solution Approach 1:
The device is segmented into distinct functional layers: a doped substrate, a barrier layer with higher bandgap, and a channel layer with lower bandgap. This segmentation allows each layer to perform its specific function optimally while maintaining overall device performance through controlled interfaces between layers.
Solution Approach 2:
The patent employs composite material structures combining different semiconductor materials with different bandgaps (e.g., AlGaN barrier layer over GaN channel layer). This composite approach enables the formation of 2DEG at the heterointerface while maintaining structural integrity and electrical performance.
2Adaptability or versatility
If doped semiconductor structure is integrated into substrate to form diode, then diode functionality is achieved, but manufacturing precision requirements increase due to coplanarity constraints
Solution Approach 1:
The doped semiconductor structure is formed extending from the substrate surface into the substrate bulk, utilizing the vertical dimension to achieve diode functionality. The structure emerges from the substrate and is positioned to be coplanar with the gate electrode, solving the coplanarity constraint while enabling diode operation.
Solution Approach 2:
The doped semiconductor structure is locally doped with specific doping concentrations and types in specific regions of the substrate. This local quality variation creates the p-n junction diode functionality only where needed, while maintaining the overall substrate integrity and enabling coplanar configuration with other device components.
3Reliability
If doped semiconductor structure is positioned non-overlapping with gate electrode, then device reliability is improved by avoiding electrical interference, but device area increases
Solution Approach 1:
The doped semiconductor structure forming the diode is spatially separated from the gate electrode by positioning it in a non-overlapping configuration. This extraction of the diode structure from the gate region eliminates electrical interference while maintaining functional integration within the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the control and manipulation of 2DEGs, improving the performance of HEMTs and integrating p-n junction diodes effectively, thereby addressing the limitations in existing semiconductor devices.
Implementation Method 1
a barrier layer, a channel layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer
Implementation Method 2
optimizing performance due to limitations in bandgap engineering and doping concentrations, which affect the formation and control of two-dimensional electron gases (2DEGs)
Implementation Method 3
a doped substrate, and a doped semiconductor structure embedded in the doped substrate, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween
Data Source
AI summary
A semiconductor device includes a doped substrate, a barrier layer, a channel layer, and a doped semiconductor structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate and at a position lower than the channel layer, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween.