Nitride Heterojunction Diode Structure for Low Turn-On and High Breakdown
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Solution Overview
Problem
Semiconductor devices integrating Schottky diodes and PIN diodes face challenges in achieving a balance between low turn-on voltage and high breakdown voltage, with existing structures often compromising on either parameter due to limitations in heterojunction design and electrode configurations.
Innovation Solution
A semiconductor device structure is developed comprising a substrate, multiple nitride semiconductor layers, and electrodes, where a heterojunction between the barrier and channel layers forms a 2DEG region, and the electrode configuration allows for simultaneous operation of Schottky and PIN diodes under different bias conditions, with the PIN diode dominating the breakdown voltage and the Schottky diode contributing to low turn-on voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional heterojunction structure is used, then the breakdown voltage is improved, but the turn-on voltage becomes too high
Solution Approach 1:
The patent combines Schottky diode and PIN diode into a single integrated device structure. The Schottky contact provides low turn-on voltage (0.7-1.2V) while the PIN junction provides high breakdown voltage (>400V), achieving both requirements simultaneously through functional integration rather than separate devices
Solution Approach 2:
Different regions of the device are assigned different functions: the Schottky contact region handles low-voltage conduction with minimal turn-on loss, while the PIN junction region handles high-voltage blocking. The heterostructure creates localized 2DEG regions that enhance carrier transport in specific areas without compromising overall breakdown characteristics
2Ease of manufacture
If the electrode configuration is simplified, then the manufacturing process is improved, but the electrical performance deteriorates
Solution Approach 1:
The top electrode structure serves multiple functions simultaneously: it forms the Schottky contact for low-voltage conduction, provides electrical connection to the 2DEG region for carrier injection, and acts as a control electrode for device operation. This multi-functionality reduces the need for separate electrodes while maintaining electrical performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves a lower turn-on voltage while maintaining a higher breakdown voltage, providing a robust and efficient semiconductor device with improved performance under various operational conditions.
Implementation Method 1
a heterojunction between the barrier and channel layers forms a 2DEG region
Implementation Method 2
a heterojunction between the barrier and channel layers forms a 2DEG region
Implementation Method 3
the Schottky diode contributing to low turn-on voltage
Implementation Method 4
the PIN diode dominating the breakdown voltage
Data Source
AI summary
A semiconductor device structure and a method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, a first electrode and a second electrode. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The third nitride semiconductor layer is disposed on the second nitride semiconductor layer. The first electrode is disposed on the second nitride semiconductor layer and spaced apart from the third nitride semiconductor layer. The second electrode covers an upper surface of the third nitride semiconductor layer and is in direct contact with the first nitride semiconductor layer.