Nitride Insulating Film Stack for Oxide Semiconductor Hydrogen Diffusion
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Solution Overview
Problem
The increase in transistor size reduction for high-speed operation and integration in semiconductor devices leads to increased leakage current and power consumption, and the diffusion of hydrogen from insulating films into oxide semiconductor films affects the electrical characteristics and reliability of transistors.
Innovation Solution
A semiconductor device structure is implemented with a first nitride insulating film containing hydrogen for hydrogenation treatment and a second nitride insulating film with lower hydrogen content acting as a barrier film between silicon and oxide semiconductor transistors, preventing hydrogen diffusion and enhancing electrical characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single nitride insulating film is used between silicon and oxide semiconductor transistors, then the structure is simple, but hydrogen diffuses into the oxide semiconductor film causing reliability degradation
Solution Approach 1:
The single nitride insulating film is divided into two distinct films: a first nitride insulating film containing hydrogen for hydrogenation treatment of the silicon transistor, and a second nitride insulating film with lower hydrogen content serving as a barrier film to prevent hydrogen diffusion into the oxide semiconductor transistor. This segmentation resolves the contradiction by allowing each film to perform its specific function independently.
Solution Approach 2:
The second nitride insulating film acts as an intermediary barrier between the hydrogen-rich first nitride insulating film and the oxide semiconductor transistor. This intermediate layer prevents harmful hydrogen diffusion while allowing the first film to perform beneficial hydrogenation treatment on the silicon transistor.
2Reliability
If hydrogenation treatment is performed on silicon semiconductor transistors, then electrical characteristics are improved, but hydrogen diffuses into oxide semiconductor films degrading their performance
Solution Approach 1:
The second nitride insulating film serves as a protective intermediary that blocks hydrogen diffusion from the first nitride insulating film into the oxide semiconductor transistor, while allowing the hydrogenation treatment to proceed effectively on the silicon transistor.
Solution Approach 2:
Different regions of the insulating film structure are given different hydrogen content characteristics: the first nitride insulating film has high hydrogen content for hydrogenation treatment, while the second nitride insulating film has low hydrogen content to prevent hydrogen diffusion into the oxide semiconductor.
3Reliability
If two nitride insulating films with different hydrogen content are used, then hydrogen diffusion is prevented and reliability is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The two nitride insulating films are differentiated by controlling key parameters such as hydrogen content, film thickness, and formation conditions. The first film is formed with higher hydrogen content for hydrogenation, while the second film is formed with lower hydrogen content for barrier protection, allowing reliable differentiation through parameter control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure allows for safe and efficient hydrogenation treatment of silicon semiconductor transistors while preventing hydrogen diffusion into oxide semiconductor films, resulting in improved electrical characteristics and reliability of the semiconductor device.
Implementation Method 1
a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor
Implementation Method 2
when an element which has been released from an insulating film or the like included in the transistor diffuses as an impurity into an oxide semiconductor film including a channel formation region
Data Source
AI summary
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.