Nitride Semiconductor Interface Passivation for Stable HEMT Threshold Voltage

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Solution Overview

Problem

Semiconductor devices using nitride semiconductors face deterioration in characteristics due to surface states at the interface between the nitride semiconductor layer and the insulating layer, leading to degradation in mobility, fluctuation in threshold voltage, and increased on-resistance.

Innovation Solution

The introduction of a nitride semiconductor device with a nitride semiconductor layer, an insulating layer, a region containing hydrogen or deuterium, and a fluorine region adjacent to the interface, which terminates dangling bonds and reduces surface states, thereby improving transistor characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the interface between nitride semiconductor layer and insulating layer is formed directly, then the manufacturing process is simple, but surface states cause mobility degradation, threshold voltage fluctuation, and increased on-resistance

Engineering Contradiction:

Improveinterface formation process simplicityVSAvoidinterface quality and transistor characteristic control

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

A surface treatment step is introduced as a preliminary action before insulating layer formation. This additional step improves interface quality by reducing surface states, achieving better manufacturing precision while maintaining reasonable process simplicity through a single, integrated treatment step

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses the deterioration of transistor characteristics by reducing surface states, enhancing mobility, and maintaining a stable threshold voltage, resulting in improved performance of high electron mobility transistors (HEMTs).

Implementation Method 1

a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium

Methodology Applied

Scientific EffectDangling bond termination: Chemical Bonding

Implementation Method 2

a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine

Methodology Applied

Scientific EffectSurface state reduction: Adsorption

Data Source

PatentUS11894452B2Semiconductor device, method for manufacturing the same, power circuit, and computer

Publication Date: 2024.02.06 KK TOSHIBA

AI summary

A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.