Nitride Intermediate Region for Semiconductor Stability
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Solution Overview
Problem
Semiconductor devices face instability and fluctuation in characteristics due to damage during processing and the use of oxide gate insulating films, which lead to poor uniformity and desired characteristics not being easily obtained.
Innovation Solution
A semiconductor device configuration using a nitride intermediate region with Alx4Ga1-x4N and BN compounds, positioned between nitride semiconductor regions, functions as a gate insulating film, suppressing oxidization and leakage current, and maintaining chemical affinity with semiconductor regions to stabilize characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide gate insulating films are used, then insulation is provided, but oxidization and leakage current occur leading to poor uniformity and unstable characteristics
Solution Approach 1:
A nitride intermediate region is introduced between the gate electrode and the nitride semiconductor region. This intermediate region acts as a mediator that prevents direct contact between the gate electrode and semiconductor, thereby suppressing oxidization of the semiconductor surface and reducing leakage current while maintaining electrical insulation.
Solution Approach 2:
The gate insulating structure is formed as a composite of multiple layers including oxide gate insulating film and nitride intermediate region. This composite structure combines the high insulation properties of oxide materials with the protective and low-leakage properties of nitride materials, achieving both insulation and characteristic stability.
2Ease of manufacture
If processing is performed on nitride semiconductor regions, then device fabrication is enabled, but damage occurs during processing leading to instability
Solution Approach 1:
The nitride intermediate region is formed beforehand to serve as a protective cushion layer during subsequent processing steps. This intermediate region absorbs processing damage and prevents direct damage to the nitride semiconductor region, thereby maintaining device stability even after fabrication processes.
3Manufacturing precision
If gate insulating films are nitrided, then surface properties change, but desired characteristics cannot be easily obtained
Solution Approach 1:
The nitride intermediate region serves as a dedicated nitrided layer that acts as an intermediary between the gate electrode and semiconductor. By concentrating the nitriding function in this intermediate region, the desired surface properties are achieved without compromising the uniformity and characteristics of the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nitride intermediate region enhances the stability and uniformity of semiconductor device characteristics by preventing nitriding of gate insulating films and maintaining surface film properties, enabling a normally-off operation with reduced leakage current.
Implementation Method 1
functions as a gate insulating film, suppressing oxidization and leakage current
Implementation Method 2
functions as a gate insulating film, suppressing oxidization and leakage current
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and an intermediate region. A position of the first electrode is between a position of the second electrode and a position of the third electrode. The first semiconductor region is separated from the first, second, and third electrodes. The second semiconductor region is provided between the second electrode and the first semiconductor region. The third semiconductor region is provided between the third electrode and the first semiconductor region. The intermediate region includes at least one of a first compound or a second compound. At least a portion of the first electrode is positioned between the second and third semiconductor regions. The intermediate region includes a first partial region, a second partial region, and a third partial region.