Group III Nitride Semiconductor Pattern Formation via Laser Polarity Conversion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for forming patterns on group III nitride semiconductor substrates are complex and costly, involving multiple processes including the use of masks, which increase manufacturing time and expenses.
Innovation Solution
A method using laser irradiation to convert the polarity of specific regions on the substrate, allowing for etching to form patterns without the need for photoresist or mask processes, utilizing the difference in etching characteristics between nitrogen and group III polarity surfaces to create patterns through wet etching with KOH, H2SO4, or H2PO4.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a mask layer and photoresist are used to form patterns, then pattern formation is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The invention extracts and removes the mask layer and photoresist from the conventional pattern formation process. Instead of using these additional materials, the patent directly etches the group III nitride semiconductor substrate to form patterns, thereby eliminating the complexity associated with mask fabrication, photoresist coating, and multiple removal steps while maintaining pattern formation capability
Solution Approach 2:
The invention introduces an intermediary protective layer that is selectively removed to expose specific regions of the substrate for pattern formation. This protective layer serves as a temporary mask during etching but is designed to be easily removable, simplifying the overall process compared to conventional multi-layer mask systems while still enabling precise pattern definition
2Manufacturing precision
If multiple processes are used to form patterns, then pattern formation is achieved, but manufacturing time increases
Solution Approach 1:
The invention merges multiple discrete process steps into a single integrated etching operation. By directly etching the substrate without separate mask application, photoresist coating, and multiple removal steps, the patent reduces the number of process transitions and handling operations, thereby significantly reducing total manufacturing time while maintaining pattern formation precision
Solution Approach 2:
The invention performs preliminary preparation of the substrate surface and selective region protection before the main etching step. By pre-defining protected regions and preparing the substrate in advance, the patent enables a single efficient etching pass to create the final pattern, eliminating the need for multiple iterative etching and mask removal cycles that would increase manufacturing time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the pattern formation process, reducing manufacturing time and costs while improving the efficiency of light extraction in group III nitride semiconductor light emitting devices by forming irregular or grooved patterns.
Implementation Method 1
irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate
Implementation Method 2
the polarity of the first region may be converted into group III polarity by the laser irradiation
Implementation Method 3
The etching of the at least one second region may be performed by wet etching using any one material of KOH, H2SO4 and H2PO4
Data Source
AI summary
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.