Nitride Semiconductor Laser Reflection Surface Crystal Growth
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Solution Overview
Problem
Conventional nitride-based semiconductor laser devices have complex manufacturing processes and reduced luminous efficiency due to uneven reflection surfaces formed by ion beam etching, leading to scattered laser beams and decreased efficiency.
Innovation Solution
A nitride-based semiconductor light-emitting device with a facet formed by a (000-1) plane and a reflection surface inclined at a prescribed angle, both formed during crystal growth, simplifying the manufacturing process and achieving excellent flatness to prevent scattering and enhance luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If ion beam etching is used to form the reflection surface, then the reflection surface can be formed after the semiconductor device layer is created, but the manufacturing process becomes complicated and the reflection surface has small unevenness causing light scattering
Solution Approach 1:
The reflection surface is formed in advance during the crystal growth process of the semiconductor device layer, rather than being created afterward by etching. This preliminary formation ensures the reflection surface is generated simultaneously with the device layer, eliminating the need for separate etching steps and ensuring inherent flatness throughout the manufacturing process
2Reliability
If ion beam etching is used to form the reflection surface, then the process can be completed in steps, but the reflection surface exhibits small unevenness that scatters the laser beam and reduces luminous efficiency
Solution Approach 1:
The reflection surface is formed during the crystal growth process itself, ensuring it is created simultaneously with the semiconductor device layer. This approach guarantees the reflection surface is inherently flat and free from the unevenness that causes light scattering and energy loss, thereby maintaining high luminous efficiency and stable laser beam emission
3Device complexity
If the semiconductor device layer is grown flat on the substrate, then the layer structure is simple, but an additional ion beam etching step is required to create the inclined reflection surface
Solution Approach 1:
The formation of the reflection surface is merged with the crystal growth process of the semiconductor device layer. By controlling the growth conditions, the inclined reflection surface and the device layer are created simultaneously in a single process, eliminating the need for separate etching steps and reducing overall manufacturing complexity while maintaining simple structural design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution simplifies the manufacturing process, reduces scattering, and improves luminous efficiency by forming the reflection surface simultaneously with crystal growth, ensuring a stable and efficient laser beam emission.
Implementation Method 1
a nitride-based semiconductor device layer formed on a substrate, and having a light-emitting layer with a main surface formed by a (H, K, −H−K, 0) plane
Implementation Method 2
a reflection surface formed on a region opposed to the facet, formed by a growth surface of the nitride-based semiconductor device layer, and extending to be inclined at a prescribed angle with respect to the facet
Implementation Method 3
a piezoelectric field caused in the semiconductor device layer (light-emitting layer)
Data Source
AI summary
A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).