Nitride Semiconductor Laser Splitting via Trench Segmentation
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Solution Overview
Problem
Conventional methods for manufacturing nitride semiconductor light-emitting elements face challenges in producing high-output semiconductor lasers with accurate element splits, leading to issues like particle generation and reduced manufacturing yield due to cracking or displacement of the element split line, which affects the reliability and efficiency of nitride-based semiconductor lasers, especially in high-temperature vibrating environments.
Innovation Solution
A method involving the formation of a semiconductor layer stacked substrate with specific trench structures and recesses to align and split the waveguides accurately, reducing the displacement of the element split line and minimizing particle generation, thereby ensuring stable and reliable nitride semiconductor light-emitting elements with different waveguide widths at each end.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional element splitting methods are used for nitride semiconductor lasers, then manufacturing process is simple, but element split line displacement and cracking occur leading to low manufacturing precision
Solution Approach 1:
The invention divides the element splitting process into multiple controlled stages by creating multiple trenches at different positions and depths. The first trench is formed at a first position, then a second trench at a second position, followed by a third trench at a third position. This segmented approach allows precise control of the split line progression, preventing displacement and cracking while achieving accurate element separation.
Solution Approach 2:
The invention performs preliminary trench formation actions before the actual element split occurs. By pre-forming multiple trenches at predetermined positions and depths, the splitting path is established in advance, guiding the element split to follow the desired trajectory and preventing deviations that would cause line displacement or cracking.
2Productivity
If conventional element splitting is used, then manufacturing process is fast, but particle generation increases reducing productivity
Solution Approach 1:
The splitting process is segmented into multiple controlled trench formation steps rather than a single abrupt split. By forming trenches sequentially at different positions and depths, the material is gradually separated along a predetermined path, minimizing violent fracture and particle generation. This enables high-yield manufacturing with reduced contamination.
3Reliability
If simple splitting method is used, then manufacturing is easy, but element cracking occurs reducing reliability
Solution Approach 1:
The invention segments the splitting process into multiple controlled trench formations rather than a single simple cut. The first trench at a first position, second trench at a second position, and third trench at a third position create a gradual separation path that distributes stress, preventing sudden cracking and ensuring reliable element separation.
Solution Approach 2:
Different trenches are formed with specific local characteristics - each trench has a predetermined position and depth optimized for its location. This local quality control ensures that each segment of the split process addresses the specific mechanical and structural requirements at that location, preventing cracking while maintaining manufacturing feasibility.
Data Source
AI summary
In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.