Nitride Layer Insulation for NAND Bit Line Leakage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices integrate at higher levels, the narrow spacing between interconnections leads to decreased insulation breakdown voltage and increased interconnection resistance, potentially causing operation speed decreases and short failures in NAND nonvolatile memory devices.
Innovation Solution
The implementation of a semiconductor device design that includes a semiconductor layer with a first insulating film having specific surface portions and interconnections, where a nitride layer is used to connect the interconnections to the semiconductor layer, and a recess is formed between adjacent bit lines to widen the spacing and reduce leakage current, thereby increasing insulation breakdown voltage and preventing the narrowing of bit lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the spacing between interconnections is reduced to increase integration, then device integration is improved, but insulation breakdown voltage decreases and leakage current increases
Solution Approach 1:
A nitride layer is introduced as an intermediary between adjacent bit lines (interconnections). This nitride layer acts as a barrier that suppresses leakage current while allowing the spacing between bit lines to remain narrow for high integration. The nitride layer mediates the electrical interaction between adjacent conductors, preventing direct leakage paths.
Solution Approach 2:
The nitride layer is selectively formed only in specific regions where leakage current suppression is needed - namely, between adjacent bit lines. The bit lines themselves maintain their narrow width for high integration, while the nitride layer provides localized quality enhancement (leakage suppression) precisely where required, without affecting other parts of the device.
2Productivity
If the bit line width is reduced to increase integration, then device integration is improved, but interconnection resistance increases
Solution Approach 1:
The interconnection structure uses a composite approach by combining the conductive bit line material with the nitride layer. The nitride layer, while primarily serving as a leakage barrier, also modifies the effective electrical characteristics of the interconnection system, helping to manage resistance effects in narrow bit lines through its presence in the composite structure.
3Productivity
If the spacing between bit lines is reduced to increase integration, then device integration is improved, but short failures between bit lines occur
Solution Approach 1:
The nitride layer serves as a protective intermediary between adjacent bit lines, physically and electrically separating them to prevent short failures. Even when bit lines are placed close together for high integration, the nitride layer maintains electrical isolation, acting as a mediator that prevents harmful direct contact or leakage between neighboring conductors.
Solution Approach 2:
The nitride layer is formed in advance during the manufacturing process, before final device operation. This pre-formed barrier provides cushioning protection against potential short failures, preventing leakage current paths from developing between bit lines before they can cause device failure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses leakage current and increases insulation breakdown voltage, preventing the narrowing of bit lines and maintaining the manufacturing yield of semiconductor devices by using a nitride layer and recess formation between interconnections.
Implementation Method 1
a nitride layer is used to connect the interconnections to the semiconductor layer... effectively suppresses leakage current and increases insulation breakdown voltage
Data Source
AI summary
A semiconductor device includes a semiconductor layer and a first insulating film provided on the semiconductor layer. The first insulating film has a surface opposite to the semiconductor layer, the surface including a first portion, a second portion and a third portion between the first portion and the second portion. The device includes a first interconnection provided on a first portion and a second interconnection provided on the second portion. The first interconnection and the second interconnection extend in a first direction. The device further includes a conductor and a nitride layer. The conductor extends through the first insulating film in a second direction from each of the first interconnection and the second interconnection toward the semiconductor layer, and the conductor electrically connects the first interconnection to the semiconductor layer. The nitrided layer is provided at least on the third surface.