Nitride Semiconductor Layer Compensation for Low-Leakage Dislocation Control
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Solution Overview
Problem
Existing semiconductor devices using nitride semiconductors face challenges in reducing threading dislocations without increasing leakage current, as mask layers can unintentionally convert surrounding nitride semiconductors into n-type, degrading device characteristics.
Innovation Solution
A semiconductor device with a channel layer and a barrier layer in a laminated body, where the lower layer side includes an n-type conversion factor with a concentration profile having peaks, and an upper layer side has a compensated area with a compensation factor of 6×10^18 cm^-3 or more to mitigate n-type conversion, reducing threading dislocations while maintaining device efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a mask layer is introduced into a laminated body of a nitride semiconductor to reduce threading dislocations, then the occurrence of threading dislocations is reduced, but the leakage current increases due to unintentional n-type conversion of surrounding nitride semiconductor
Solution Approach 1:
A compensation layer is introduced as an intermediary between the mask layer and the channel layer. This compensation layer contains a compensation factor that counteracts the n-type conversion effect of the mask layer, thereby preventing leakage current while allowing the mask layer to continue reducing threading dislocations. The compensation layer mediates between the harmful n-type conversion and the needed dislocation reduction.
Solution Approach 2:
The compensation factor is localized specifically in the region where n-type conversion occurs due to the mask layer. By concentrating the compensation factor in this specific area rather than uniformly throughout the entire device, the invention addresses the local harmful effect (leakage current at the mask layer interface) without affecting other regions of the device.
2Reliability
If the concentration of compensation factor is increased to suppress leakage current, then the insulating properties are improved, but the device complexity increases
Solution Approach 1:
The compensation layer serves multiple functions simultaneously: it compensates for n-type conversion to prevent leakage current, maintains the effectiveness of the mask layer in reducing threading dislocations, and preserves the overall device structure. By making this single layer multi-functional, the invention avoids adding multiple separate layers that would increase complexity.
Data Source
AI summary
A semiconductor device capable of reducing density of threading potential without increasing a leakage current is provided. A semiconductor device including a channel layer that is included in a laminated body of a nitride semiconductor provided on a substrate, and a barrier layer that is included in the laminated body on an upper layer side with respect to the channel layer, in which the laminated body on a lower layer side with respect to the channel layer includes an n-type conversion factor that converts the nitride semiconductor into an n-type in a concentration profile having at least one or more peaks in a lamination direction of the laminated body, and a compensated area including 6×1018 cm−3 or more of a compensation factor for compensating for the n-type conversion factor is provided in the laminated body on an upper layer side with respect to peaks of the concentration profile of the n-type conversion factor.