Nitride Layer Protection During Semiconductor Removal
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Solution Overview
Problem
Conventional semiconductor processes face challenges in enhancing carrier mobility while avoiding integration issues and collateral damage to nitride material layers during removal steps, which complicates the manufacturing process.
Innovation Solution
A novel semiconductor process that involves removing a photoresist in the absence of oxygen and subsequently modifying a nitride material layer in the presence of oxygen to protect it from damage during the removal of another nitride material layer, using techniques such as dry or wet oxidation and non-oxidative acid removal to minimize dimensional loss and maintain the integrity of the modified layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional removal step is used to remove a nitride material layer, then the removal process can be completed, but the first nitride material layer is damaged or slashed
Solution Approach 1:
A protective step is performed before the removal step to modify the first nitride material layer in the presence of oxygen, creating a protective modification that prevents damage during subsequent removal of the second nitride material layer
Solution Approach 2:
The patent changes the chemical state of the first nitride material layer by exposing it to oxygen in the protective step, modifying its properties to resist damage during the removal process while maintaining selectivity against the second nitride layer
2Manufacturing precision
If photoresist is removed in the presence of oxygen, then oxidation can occur, but other materials are collaterally oxidized causing damage
Solution Approach 1:
The protective step is performed in advance to modify the first nitride material layer before photoresist removal, enabling subsequent oxygen-based removal processes without collateral damage to other materials
Solution Approach 2:
The protective modification acts as a cushion or protective barrier for the first nitride material layer, preparing it in advance to withstand the oxidative conditions of photoresist removal without suffering collateral oxidation damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the effective removal of nitride material layers without substantially damaging the first nitride layer, maintaining its integrity and reducing dimensional loss to less than 5 Å, thereby improving semiconductor device performance and simplifying the manufacturing process.
Implementation Method 1
a protective step is carried out to modify the spacer in the presence of oxygen to obtain a resultant modified spacer
Implementation Method 2
To remove a photoresist in the absence of oxygen, no material would be collaterally oxidized
Data Source
AI summary
A method for forming a semiconductor device includes firstly providing a gate structure disposed on a substrate and a first nitride material layer disposed on the gate structure, secondly performing a protective step to modify the first nitride material layer in the presence of oxygen, then forming a second nitride material layer on the substrate, and later performing a removal step to remove the second nitride material layer without substantially slashing the modified first nitride material layer.