Nitride Composition Layout in Semiconductor Devices for Current Collapse
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Solution Overview
Problem
Semiconductor devices face challenges in stabilizing characteristics due to current collapse and breakdown voltage issues, particularly in the vicinity of the drain and gate electrodes, where uniform nitride regions lead to either high current collapse or low breakdown voltage.
Innovation Solution
The semiconductor device incorporates nitride regions with varying silicon to nitrogen ratios, where a Si-rich region is applied near the drain electrode and an N-rich region near the gate electrode, effectively suppressing current collapse while maintaining high breakdown voltage by controlling the electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a uniform nitride region is used, then the manufacturing process is simple, but current collapse occurs and breakdown voltage is low
Solution Approach 1:
The patent applies local quality by creating different nitride regions with varying silicon to nitrogen ratios at different locations. Specifically, a first nitride region with a first silicon to nitrogen ratio is formed near the gate electrode, while a second nitride region with a second silicon to nitrogen ratio is formed near the drain electrode. This spatial variation in composition allows each region to perform its specific function: the first region suppresses current collapse while the second region maintains high breakdown voltage, resolving the contradiction between manufacturing simplicity and device reliability.
Solution Approach 2:
The patent employs parameter changes by varying the silicon to nitrogen ratio parameter within the nitride regions. The first nitride region has a first silicon to nitrogen ratio optimized for current collapse suppression, while the second nitride region has a second silicon to nitrogen ratio optimized for breakdown voltage enhancement. This parameter optimization at different locations enables simultaneous achievement of both reliability requirements without compromising manufacturing feasibility.
2Reliability
If an N-rich nitride region is used near the gate, then current collapse is suppressed, but breakdown voltage decreases
Solution Approach 1:
The patent resolves this contradiction by applying local quality through spatial differentiation of nitride region composition. The first nitride region with higher nitrogen content (first silicon to nitrogen ratio) is positioned near the gate electrode to suppress current collapse, while the second nitride region with different composition (second silicon to nitrogen ratio) is positioned near the drain electrode to maintain high breakdown voltage. This localized optimization allows each region to fulfill its specific functional requirement without compromising the other.
3Strength
If a Si-rich nitride region is used near the drain, then breakdown voltage is high, but current collapse increases
Solution Approach 1:
The patent applies local quality by strategically positioning nitride regions with different compositions in specific locations. The second nitride region with higher silicon content (second silicon to nitrogen ratio) is formed near the drain electrode to achieve high breakdown voltage, while the first nitride region with different composition is formed near the gate electrode to suppress current collapse. This spatial separation of functional requirements resolves the contradiction between breakdown voltage and current collapse suppression.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second, third electrodes, first, and second semiconductor regions, a first conductive member, and an insulating member. The third electrode is between the first and second electrodes. The first semiconductor region includes first to sixth partial regions. The second semiconductor region includes first to third semiconductor portions. The first conductive member is electrically connected with a first one of the first and third electrodes. The first conductive member includes a first conductive end portion. The insulating member includes first and second nitride regions. The second semiconductor portion is between the fifth partial region and the first nitride region. The third semiconductor portion is between the sixth partial region and the second nitride region. The first nitride region includes a first nitride end portion. The first nitride end portion is in contact with the second semiconductor region.