Nitride Semiconductor Lead Layout for Low-Inductance Switching
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Solution Overview
Problem
The existing semiconductor devices with III-V compound nitride semiconductors face challenges in reducing inductance, which affects switching performance due to the length of the current path and the use of bonding wires.
Innovation Solution
A semiconductor device configuration with a nitride semiconductor element, where the drain electrode is bonded to a first lead, and the source electrode is bonded to a second lead, with a connection lead on the reverse face overlapping the element, creating a conduction path that cancels magnetic fields and reduces inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If bonding wires are employed for connection, then ease of manufacture is improved, but inductance increases due to longer current path
Solution Approach 1:
The connection lead is disposed on the element reverse face, utilizing the third dimension (thickness direction) to create a overlapping configuration. This spatial arrangement shortens the current path by allowing current to flow through the connection lead in parallel with the semiconductor element, rather than traveling along the surface through bonding wires.
2Device complexity
If conventional lead arrangement is used, then device complexity is reduced, but inductance increases due to non-canceling magnetic fields
Solution Approach 1:
The connection lead is specifically configured to generate a magnetic field that opposes and cancels the magnetic field generated by the principal current flowing through the semiconductor element. By arranging the connection lead to overlap with the element and carry current in the opposite direction, the harmful inductive effects are preemptively counteracted.
3Object-generated harmful factors
If connection lead is disposed on element reverse face overlapping with semiconductor element, then inductance is reduced through magnetic field cancellation, but device complexity increases
Solution Approach 1:
The connection lead serves multiple functions: it provides the conduction path for the principal current, acts as a magnetic field cancellation element to reduce inductance, and is integrated into the lead frame structure. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration shortens the current path, reduces inductance, and suppresses noise emission by canceling magnetic fields, thereby enhancing switching performance and heat dissipation.
Implementation Method 1
the principal current flows in a direction opposite to the current path from the first lead to the second lead. A magnetic field generated by the principal current flowing through the current path from the first lead to the second lead and another magnetic field generated by the principal current flowing through the connection lead will cancel each other, which is advantageous to reducing the generation of the inductance
Data Source
AI summary
A semiconductor device includes a semiconductor element, a first lead, a second lead and a connection lead. The semiconductor element includes an electron transit layer formed of a nitride semiconductor, an element obverse face and an element reverse face that are arranged to face opposite to each other in a thickness direction, and a gate electrode, a source electrode and a drain electrode that are disposed on the element obverse face. The drain electrode is bonded to the first lead. The source electrode is bonded to the second lead. The connection lead is connected to the second lead and disposed on the element reverse face so as to overlap with the semiconductor element as viewed in the thickness direction. The connection lead provides a conduction path for a principal current subjected to switching.