Nitride LED Interface Separation Using a 2D Crystal Template
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Solution Overview
Problem
Current methods for preparing nitride light emitting diodes (LEDs) on sapphire substrates involve material waste and complex processing due to the need for a sacrificial GaN layer and rough surface separation, which are not suitable for mass production.
Innovation Solution
A method involving a two-dimensional atomic crystal template with a modified region using van der Waals and covalent bonds, allowing nondestructive interface separation and eliminating the need for a sacrificial layer, using a submicron pattern mask and atomic irradiation to create a frame structure for nitride epitaxy, enabling efficient separation and reuse of substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ultraviolet laser ablation of a bottom layer of gallium nitride (GaN) sacrificial layer is used to separate the upper nitride epitaxial structure, then the nitride epitaxial structure can be separated from the sapphire substrate, but material waste occurs and the yield is low
Solution Approach 1:
The patent introduces a two-dimensional material transition layer (such as graphene or hexagonal boron nitride) as an intermediary between the nitride epitaxial structure and the sapphire substrate. This transition layer enables weak coupling that allows physical separation without destroying the nitride epitaxial structure, eliminating the need for sacrificial GaN layers and avoiding material waste while maintaining separation quality
Solution Approach 2:
The patent changes the coupling strength parameter at the interface by using van der Waals bonding in the two-dimensional material transition layer instead of strong covalent bonding. This parameter change enables the interface to be separated through physical methods without requiring ultraviolet laser ablation that causes material waste
2Manufacturing precision
If ultraviolet laser ablation is used to separate the nitride epitaxial structure, then separation can be achieved, but the stripped surface becomes rough with gallium residue requiring additional grinding, polishing, and cleaning
Solution Approach 1:
The two-dimensional material transition layer acts as a mediator that enables clean physical separation. When separated, the nitride epitaxial structure surface remains smooth and free of gallium residue, eliminating the need for additional grinding, polishing, and cleaning steps, thus reducing processing complexity while maintaining separation quality
Solution Approach 2:
The patent replaces the mechanical/chemical process of grinding and polishing with a clean physical separation method enabled by the two-dimensional material transition layer. This substitution eliminates the need for complex post-separation processing steps
3Ease of manufacture
If a two-dimensional material transition layer is introduced to create a weakly coupled interface, then physical separation becomes possible, but the method is limited to size and interface quality and is incompatible with production line technologies
Solution Approach 1:
The patent designs the two-dimensional material transition layer with universal applicability to wafer-level nitride LED and micro-LED array manufacturing. The method can be integrated into existing epitaxy and processing technologies, enabling both ease of separation and compatibility with mass production requirements
Solution Approach 2:
The patent optimizes the thickness and material properties of the two-dimensional material transition layer to achieve both easy physical separation and compatibility with production line technologies. By controlling the coupling strength and interface quality parameters, the method becomes suitable for mass production while maintaining separation ease
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for nondestructive interface separation, reduces material waste, simplifies the processing technology, and is compatible with nitride LED and micro-LED production, making it energy-saving, environment-friendly, and suitable for mass production.
Implementation Method 1
layers of the two-dimensional atomic crystal layer are connected by using a pure van der Waals force
Implementation Method 2
making, by using a visible laser directional ablation technology, visible laser incident from the back surface of the transparent substrate to destruct the modified region of the two-dimensional atomic crystal layer
Implementation Method 3
emitting, by utilizing a plasma source, irradiated atoms to bombard the two-dimensional atomic crystal layer having the submicron pattern mask, and modifying a region corresponding to the two-dimensional atomic crystal layer below the circular through hole of the submicron pattern mask
Data Source
AI summary
Disclosed is a method for preparing a nitride light emitting diode (LED) and nondestructive interface separation. A two-dimensional atomic crystal layer on a transparent substrate is modified by using an atomic irradiation technology, to obtain an irradiated region; a nitride LED structure is prepared on a modified two-dimensional atomic crystal layer, and a support substrate is cured by means of a metal functional layer; visible laser is incident from a back surface of the transparent substrate to directionally destruct the irradiated region of the two-dimensional atomic crystal layer, so as to obtain a whole structure of the nitride LED structure, the metal functional layer and the support substrate that are separated from the transparent substrate. The present disclosure can nondestructively separate the interface and repeatedly use the transparent substrate.