Nitride Semiconductor LED with Band-Gap Modulated Quantum Barriers

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Nitride semiconductor light emitting devices are susceptible to Electrostatic Discharge (ESD) and existing methods to mitigate this, such as using separate Schottky diodes, increase manufacturing costs and complicate the process due to the need for additional components and complex electrode structures.

Innovation Solution

A nitride semiconductor light emitting device with a multilayer structure featuring a multiple quantum well structure and band-gap modulated quantum barrier layers, which enhances current spreading and ESD withstand voltage without the need for separate zener or Schottky diodes, simplifying the manufacturing process and reducing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a separate Schottky diode is connected in parallel to protect the LED from ESD, then ESD resistance is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:

ImproveESD resistanceVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the ESD protection function with the LED active layer by integrating a multilayer structure directly into the quantum well region. Instead of using a separate Schottky diode, the protection mechanism is merged into the existing LED structure through alternating high-bandgap and low-bandgap semiconductor layers, eliminating the need for additional components and reducing structural complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The multilayer structure in the active layer serves dual functions: it maintains light-emitting functionality while simultaneously providing ESD protection. The alternating high-bandgap and low-bandgap layers create pathways that allow the structure to handle both optical emission and electrostatic discharge, making the same structure multi-functional rather than requiring separate dedicated components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If a separate Schottky diode is connected in parallel to protect the LED from ESD, then ESD resistance is improved, but manufacturing cost increases

Engineering Contradiction:

ImproveESD resistanceVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The ESD protection function is merged into the LED active layer fabrication process. The multilayer structure is grown in-situ using semiconductor manufacturing techniques during the same process steps used to create the quantum well structure, eliminating the need for separate Schottky diode assembly and reducing manufacturing costs.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts the ESD protection function from the separate Schottky diode component and integrates it directly into the active layer structure. This extraction eliminates the need for additional components and their associated assembly processes, thereby reducing manufacturing complexity and cost.

Inventive Principle:

Principle #2Taking out (Extraction)

3Reliability

If a Schottky diode is used for ESD protection, then ESD resistance is improved, but the device area increases

Engineering Contradiction:

ImproveESD resistanceVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The ESD protection mechanism is merged into the existing active layer footprint. The multilayer structure occupies the same spatial region as the quantum well structure, utilizing the existing device area efficiently without requiring additional space for separate protection components.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The ESD protection structure is nested within the active layer configuration. The alternating high-bandgap and low-bandgap layers are embedded within the quantum well structure, creating a nested arrangement where the protection function is contained within the existing device boundaries rather than requiring external components.

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The multilayer structure effectively improves ESD withstand voltage while maintaining light emitting efficiency and brightness, eliminating the need for additional components and reducing manufacturing costs.

Implementation Method 1

the active layer comprises a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers

Methodology Applied

Scientific EffectMultiple quantum well structure: Potential Well

Implementation Method 2

at least one of the quantum barrier layers has a band-gap modulated multilayer structure

Methodology Applied

Scientific EffectBand-gap modulation:

Data Source

PatentUS7902544B2Nitride semiconductor light emitting device

Publication Date: 2011.03.08 SAMSUNG ELECTRONICS CO LTD

AI summary

The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.