Nitride LED Growth via Inert Transfer Chamber
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Solution Overview
Problem
The quality of semiconductor layers in light emitting diodes (LEDs) is affected by the vapor deposition process, leading to issues with crystallinity and reliability, particularly when nitride semiconductor crystals are grown on substrates and exposed to air during transfer between reaction chambers, resulting in potential oxide formation and quality degradation.
Innovation Solution
A method involving the sequential growth of first and second conductivity type nitride semiconductor layers, with an undoped nitride semiconductor layer interposed between them, and the active layer grown in separate reaction chambers to minimize exposure to air and maintain optimal growth conditions, using multiple reaction chambers to enhance crystallinity and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If the substrate is transferred between reaction chambers in air, then the transfer process is simple and fast, but oxide formation occurs on the nitride semiconductor layer causing quality degradation
Solution Approach 1:
The patent applies inert atmosphere by maintaining a nitrogen environment throughout the substrate transfer process. The transfer chamber is filled with nitrogen gas, and the substrate is transferred from the first reaction chamber through the transfer chamber to the second reaction chamber without exposure to air, preventing oxide formation on the nitride semiconductor layer while enabling continuous processing.
2Manufacturing precision
If multiple reaction chambers are used for sequential layer growth, then crystallinity and layer quality are improved, but device complexity and process time increase
Solution Approach 1:
The patent segments the manufacturing process into distinct functional zones: a first reaction chamber for growing the nitride semiconductor layer, a transfer chamber for moving the substrate without air exposure, and a second reaction chamber for growing the additional nitride semiconductor layer. This segmentation allows each chamber to be optimized for its specific function while maintaining overall process quality.
Solution Approach 2:
The transfer chamber acts as an intermediary between the first and second reaction chambers. It provides a nitrogen-filled environment that mediates the substrate transfer process, preventing oxidation during transit while enabling the substrate to move between the growth chambers without direct air exposure.
3Ease of manufacture
If the nitride semiconductor layer is exposed to air during transfer, then the transfer process is simplified, but oxide formation degrades the layer quality and reliability
Solution Approach 1:
The patent maintains a nitrogen inert atmosphere in the transfer chamber to prevent oxide formation on the nitride semiconductor layer during substrate transfer. This approach preserves layer quality while enabling a relatively simple transfer process that does not require complex vacuum systems or direct air exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the crystallinity and productivity of semiconductor layers, reducing defects and pollution during substrate transfer, thereby enhancing the light emission performance and reliability of LEDs.
Implementation Method 1
Nitride semiconductor crystals, constituting a light emitting device using the group III nitride semiconductor, are grown on a sapphire or SiC substrate. In order to grow the semiconductor crystals, a plurality of gas-state sources are deposited on the substrate by a chemical vapor deposition process.
Implementation Method 2
in order to remove an oxide film naturally formed on the nitride semiconductor crystal film, a surface treatment process is performed on the nitride semiconductor crystal film by making use of hydrogen gas or mixed gases containing hydrogen
Data Source
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AI summary
There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer (102) and an undoped nitride semiconductor layer (103) on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer (104) on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.