Nitride LED Electrode Interface Doping for Stable High-Current Voltage
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Solution Overview
Problem
Conventional nitride-based semiconductor light-emitting elements experience increased element voltage under high-current density or high-temperature operations, leading to instability.
Innovation Solution
A nitride-based semiconductor light-emitting element with a surface layer region containing a high concentration of group IV n-type impurity and halogen element, where the peak concentration of the halogen element is at least 10% of the group IV n-type impurity, and a lower concentration in the internal region, along with a manufacturing method involving dry etching using plasma to form the n-side electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional n-type semiconductor structures are used, then the device can operate, but element voltage increases during large-current density or high-temperature operation leading to unstable voltage characteristics
Solution Approach 1:
The patent applies local quality by creating a surface layer region with specifically engineered impurity concentrations that differ from the internal region. The surface layer has a peak group IV n-type impurity concentration of at least 1.0×10^21 cm^-3 and a halogen element concentration of at least 10% of the group IV impurity peak concentration, while the internal region has lower group IV impurity concentration. This localized differentiation stabilizes the electrode interface during high-temperature and large-current density operations.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the concentrations of group IV n-type impurities and halogen elements in different regions. The surface layer region maintains a peak group IV impurity concentration of at least 1.0×10^21 cm^-3 with halogen element concentration at least 10% of the group IV peak, creating optimal electrical characteristics that prevent resistance increase during operation.
2Reliability
If high impurity concentration is used at the electrode contact portion, then ohmic characteristics improve, but resistance increases during large-current density or high-temperature operation
Solution Approach 1:
The patent employs composite material principles by combining group IV n-type impurities with halogen elements in specific concentrations within the surface layer region. This composite doping strategy creates a material composition that maintains stable ohmic contact characteristics, preventing resistance increase during large-current density or high-temperature operation while achieving favorable electrical characteristics.
3Productivity
If miniaturization and higher-power output are pursued, then chip size decreases and power output increases, but current densities increase requiring stable voltage characteristics
Solution Approach 1:
The patent applies local quality by creating a surface layer region with specifically engineered impurity concentrations that differ from the internal region. The surface layer has a peak group IV n-type impurity concentration of at least 1.0×10^21 cm^-3 and a halogen element concentration of at least 10% of the group IV impurity peak concentration, while the internal region has lower group IV impurity concentration. This localized differentiation stabilizes the electrode interface during high-temperature and large-current density operations.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the concentrations of group IV n-type impurities and halogen elements in different regions. The surface layer region maintains a peak group IV impurity concentration of at least 1.0×10^21 cm^-3 with halogen element concentration at least 10% of the group IV peak, creating optimal electrical characteristics that prevent resistance increase during operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes voltage characteristics under large-current density and high-temperature operations by inhibiting the diffusion of group IV n-type impurity into the n-side electrode, ensuring stable ohmic contact and reduced voltage increase.
Implementation Method 1
dry etching an n-type nitride-based semiconductor layer, using plasma containing a group IV n-type impurity and a halogen element
Implementation Method 2
dry etching an n-type nitride-based semiconductor layer, using plasma containing a group IV n-type impurity and a halogen element
Data Source
AI summary
A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm−3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.