Nitride LED Passivation Structure for Plasma-Damage-Free Patterning
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Solution Overview
Problem
Nitride semiconductor structures in light-emitting devices are prone to damage during the patterning process, leading to abnormal electron-hole combinations that reduce light-emitting efficiency, and existing manufacturing methods do not effectively prevent this damage or optimize the light-emitting area.
Innovation Solution
A light-emitting device with a nitride semiconductor structure is designed, featuring a passivation pattern that surrounds the nitride semiconductor structure to protect it from plasma damage during etching, and the shape of the nitride semiconductor structure is optimized to improve light-emitting efficiency by reducing the contact area with the growth substrate and enhancing current injection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the nitride semiconductor structure is subjected to plasma during the patterning process, then the patterning can be completed, but the side surface of the nitride semiconductor structure is damaged
Solution Approach 1:
A passivation layer is introduced as an intermediary protective barrier between the plasma environment and the nitride semiconductor structure. The passivation layer is formed to cover the side surfaces of the nitride semiconductor structure before plasma processing, preventing direct contact between plasma and the semiconductor material, thus protecting the side surfaces from damage while allowing the patterning process to proceed
Solution Approach 2:
The passivation layer is formed in advance before the plasma patterning process. This preliminary protective action ensures that when plasma is applied during patterning, the nitride semiconductor structure is already shielded, preventing side surface damage before it can occur
2Productivity
If the contact area between the growth substrate and the nitride semiconductor layer is reduced, then the light-emitting efficiency is improved, but the manufacturing precision becomes more difficult to control
Solution Approach 1:
The patent optimizes the contact area parameter between the growth substrate and the nitride semiconductor layer by adjusting epitaxial growth conditions such as temperature, pressure, and gas flow rates. By carefully controlling these parameters, the contact area is reduced to minimize abnormal electron-hole combinations and improve light-emitting efficiency while maintaining manufacturability
3Productivity
If the pad electrode position is changed to increase the light-emitting area, then the light-emitting efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent repositions the pad electrode from a conventional location to an optimized position that maximizes the light-emitting area. By changing the spatial arrangement and dimensions of the electrode configuration, the light-emitting area is increased while managing the complexity through systematic design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents plasma-induced damage, minimizes abnormal electron-hole combinations, and increases the light-emitting area, thereby enhancing the overall light-emitting efficiency of the device.
Implementation Method 1
the nitride semiconductor structure can be prevented from being damaged by plasma
Implementation Method 2
combinations of electrons and holes that participate in light emission
Data Source
AI summary
A light-emitting device and a method for manufacturing the light-emitting device are discussed. The light-emitting device can include a nitride semiconductor structure including a first semiconductor layer, an active layer and a second semiconductor layer; a passivation pattern disposed on opposing side surfaces of the nitride semiconductor structure; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer. An upper surface of the passivation pattern can be disposed to be substantially coplanar with an upper surface of the second semiconductor layer.