Nitride LED Same-Side Electrode Stacking for Uniform Current
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Solution Overview
Problem
Nitride-based semiconductor LEDs with a planar structure suffer from non-uniform current distribution and reduced effective light emission area due to the placement of electrode pads on opposite sides, leading to decreased light emission efficiency.
Innovation Solution
The electrode pads and electrodes are positioned on the same side, eliminating connection electrodes and forming in a linear or curved line to enhance current spreading and light emission efficiency, thereby increasing the effective light emission area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If electrode pads are placed on opposite sides to connect first and second conductive-type layers, then electrical connection is achieved, but effective light emission area is reduced and current distribution becomes non-uniform
Solution Approach 1:
The patent transitions from a conventional planar structure with electrode pads on opposite sides to a vertical structure where electrode pads are stacked on top of each other. This dimensional change from horizontal to vertical arrangement eliminates the space occupation of connection electrodes on the light emission surface, maximizing the effective light emission area while maintaining electrical connectivity through the vertical stack.
Solution Approach 2:
The patent implements a nested structure where the first conductive-type electrode pad is positioned on the second conductive-type electrode pad in the vertical direction. This nesting arrangement allows both electrode pads to occupy the same lateral space, eliminating the need for extensive connection electrodes and maximizing the light emission area while ensuring uniform current distribution through the stacked configuration.
2Reliability
If connection electrodes are used to connect electrode pads, then electrical connectivity is ensured, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the functions of electrode pads and connection electrodes by positioning the first conductive-type electrode pad directly on the second conductive-type electrode pad. This integration eliminates the need for separate connection electrodes, simplifying the overall electrode structure while maintaining reliable electrical connectivity between the first and second conductive-type semiconductor layers.
Solution Approach 2:
The patent extracts and eliminates the connection electrodes from the conventional electrode structure. By directly positioning the first conductive-type electrode pad on the second conductive-type electrode pad, the patent removes the intermediate connection electrodes, thereby reducing device complexity and manufacturing steps while preserving electrical connectivity.
3Area of stationary object
If electrode pads are positioned on the same side, then effective light emission area is increased, but current spreading efficiency may be compromised
Solution Approach 1:
The patent resolves the contradiction between maximizing light emission area and ensuring current spreading by transitioning to a vertical arrangement. The first and second conductive-type electrode pads are stacked vertically, allowing them to occupy the same lateral position and maximize the light emission area, while the vertical stacking path ensures efficient current spreading from the bottom electrode pad through the active layer to the top electrode pad.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light emission efficiency by ensuring uniform current distribution across the entire light emitting surface, reducing the crowding effect and enhancing luminance characteristics.
Implementation Method 1
a GaN/InGaN active layer 130 with a multi-quantum well structure
Data Source
AI summary
Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.