Process Container Nitride Oxidation to Suppress Particle Peeling
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Solution Overview
Problem
The accumulation of films in semiconductor device manufacturing process containers leads to particle generation and contamination, necessitating frequent cleaning, which reduces productivity.
Innovation Solution
A method involving the formation of a nitride film on substrates within a process container, followed by oxidizing one part of the film into an oxide film while maintaining another part as is, to regulate stress and prevent film peeling, thereby extending the cleaning cycle and improving productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the film-forming process is repeated to form cumulative films in the process container, then productivity is improved, but particles are generated when the film thickness exceeds critical film thickness
Solution Approach 1:
The patent changes the chemical composition parameter of the cumulative film by oxidizing one part of the nitride film into an oxide film. This parameter change modifies the film's properties to reduce particle generation while maintaining the cumulative film structure for continued productivity
Solution Approach 2:
The patent creates a composite film structure consisting of two different materials: an oxide film layer and a nitride film layer. This composite structure combines the benefits of both materials to suppress particle generation while allowing the cumulative film to be maintained
2Object-generated harmful factors
If the process container is cleaned frequently to remove cumulative film, then particle generation is suppressed, but productivity deteriorates due to increased cleaning cycles
Solution Approach 1:
The patent changes the chemical composition parameter of the cumulative film through oxidation, transforming it from a purely nitride film to a composite of oxide and nitride films. This modification suppresses particle generation without requiring frequent cleaning, thus maintaining productivity
Solution Approach 2:
The patent converts the potentially harmful cumulative film that causes particle generation into a beneficial composite structure. By oxidizing one part of the film, the cumulative film is transformed from a source of particles to a stable, particle-suppressing layer that extends the cleaning cycle
3Object-generated harmful factors
If the entire nitride film is oxidized into oxide film, then particle generation is suppressed, but film stress balance is disrupted causing peeling
Solution Approach 1:
The patent applies local quality by oxidizing only one part of the nitride film while maintaining another part as nitride film. This localized oxidation creates different properties in different regions of the film, achieving particle suppression while preserving stress balance through the remaining nitride portion
4Productivity
If the cleaning cycle is extended to improve productivity, then particle generation from cumulative film increases, but contamination occurs
Solution Approach 1:
The patent changes the chemical composition parameter of the cumulative film through selective oxidation, creating a composite structure that suppresses particle generation. This allows the cleaning cycle to be extended without increasing contamination, as the modified film structure remains stable and particle-free
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses particle generation, prolongs the cleaning cycle, and enhances the productivity of the film-forming process by maintaining a balanced stress in the film layers and preventing film peeling.
Implementation Method 1
supplying an oxidizing gas into the process container from which the processed at least one substrate has been unloaded so as to oxidize one part of the nitride film formed inside the process container in (b) into an oxide film
Data Source
AI summary
There is provided a technique that includes: performing a set a plurality of times, the set including: (a) loading at least one substrate into a process container; (b) performing a process of forming a nitride film on the at least one substrate by supplying a film-forming gas to the at least one substrate supported by a support in the process container; (c) unloading the processed at least one substrate from an interior of the process container; and (d) supplying an oxidizing gas into the process container from which the processed at least one substrate has been unloaded so as to oxidize one part of the nitride film formed inside the process container in (b) into an oxide film and maintain another part of the nitride film, which is different from the one part of the nitride film, as it is without oxidizing the another part.