Nitride Semiconductor Power Converting Device Integration
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Solution Overview
Problem
Current silicon-based power converting devices face limitations in efficiency due to material properties and manufacturing processes, necessitating the exploration of alternative semiconductor materials for improved power switching and passive device integration.
Innovation Solution
A nitride semiconductor-based power converting device is developed, integrating a power transistor and passive devices like resistors, inductors, and capacitors using nitride semiconductor materials, which induce 2-dimensional electron gas (2DEG) to enhance electron mobility and efficiency, with specific configurations for each component to optimize performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If silicon-based power devices are used, then current power converting devices can be manufactured with established processes, but efficiency cannot be further improved due to material property limits
Solution Approach 1:
The patent changes the fundamental material parameter from silicon to nitride semiconductor (GaN), which has superior electron mobility and breakdown voltage characteristics. This material substitution enables higher efficiency power conversion while the integration of passive devices compensates for the increased manufacturing complexity through shared fabrication processes
Solution Approach 2:
The patent merges active power devices (HEMTs) with passive devices (resistors, inductors, capacitors) into a single integrated nitride semiconductor structure. This consolidation eliminates separate manufacturing steps for passive components and reduces interconnection parasitics, thereby improving overall efficiency without proportionally increasing process complexity
2Device complexity
If power devices and passive devices are manufactured separately, then each component can be optimized independently, but device volume and complexity increase
Solution Approach 1:
The patent integrates power HEMTs and passive devices into a single nitride semiconductor chip using shared layers (channel layer, channel supply layer, buffer layer). This merging dramatically simplifies the overall device structure by eliminating separate packages and interconnections, while manufacturing precision is maintained through selective region processing and localized doping techniques
Solution Approach 2:
While integrating all components, the patent segments the nitride semiconductor structure into distinct functional regions: active device regions with specific doping profiles, passive device regions with different layer configurations, and isolation regions. This segmentation allows each component type to be independently optimized within the integrated structure
3Loss of energy
If nitride semiconductor materials are used to induce 2DEG, then electron mobility and efficiency are enhanced, but manufacturing processes become more complex
Solution Approach 1:
The patent utilizes the intrinsic property of nitride semiconductors to form 2DEG at heterojunctions (e.g., AlGaN/GaN interfaces) by changing the material composition parameter. The 2DEG provides high electron mobility and low on-resistance, improving efficiency. The manufacturing complexity is managed by incorporating 2DEG formation into the standard nitride semiconductor growth process rather than adding separate steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the volume and complexity of the device, minimizes parasitic resistance, and improves power converting efficiency by fabricating power transistors and passive devices using the same layers, thereby enhancing overall device performance.
Implementation Method 1
a channel supply layer on the channel layer, the channel supply layer including a second nitride semiconductor material and inducing a 2-dimensional electron gas (2DEG) at the channel layer
Implementation Method 2
The 2DEG may be eliminated from the portion of the channel layer around the second region of the channel supply layer via one of a positive ion implantation process and a mesa etching operation
Data Source
AI summary
A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.