Nitride Semiconductor Structure With Relaxation Region for Dopant Diffusion
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Solution Overview
Problem
Nitride semiconductor devices face challenges in achieving stable operation due to current leakage and reduced carrier mobility caused by elemental diffusion between regions, which affects the reliability and performance of the semiconductor.
Innovation Solution
A nitride semiconductor structure is designed with a first nitride region doped with Fe or Mn and a second nitride region with a different lattice length, incorporating an intermediate relaxation region to trap and suppress the diffusion of the dopant elements, thereby maintaining high electrical resistance and carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nitride semiconductor structure is designed to suppress elemental diffusion between regions, then reliability and carrier mobility are improved, but device complexity increases due to the need for multiple regions with different lattice lengths
Solution Approach 1:
The nitride semiconductor is divided into multiple distinct regions (first nitride region with high first element concentration, second nitride region with low first element concentration, and intermediate region) to suppress elemental diffusion. Each region has specific compositional characteristics that work together to prevent dopant migration while maintaining device functionality.
Solution Approach 2:
Different regions of the nitride semiconductor are given different local compositions and properties. The first nitride region has high first element concentration for specific functional properties, the second nitride region has low concentration for diffusion suppression, and the intermediate region has graded composition to manage lattice mismatch locally.
2Reliability
If an intermediate relaxation region is incorporated to trap and suppress dopant diffusion, then carrier mobility is maintained, but manufacturing precision requirements increase
Solution Approach 1:
The composition ratio x is varied across different regions to achieve the desired effects. The first nitride region uses composition ratio x1, the second nitride region uses composition ratio x2 (where x2 < x1), and the intermediate region has a graded composition ratio between them, allowing control of lattice length and diffusion characteristics through compositional parameters.
Solution Approach 2:
The intermediate relaxation region acts as a mediator between the first nitride region (high first element concentration) and the second nitride region (low first element concentration). This intermediate region with graded composition suppresses dislocation propagation and traps diffusing dopants, enabling the use of different composition ratios in adjacent regions without direct harmful interaction.
3Reliability
If Fe or Mn doping is used to achieve high electrical resistance, then device performance is improved, but elemental diffusion to other regions occurs causing current leakage
Solution Approach 1:
The harmful effect of first element diffusion is extracted and isolated by creating a dedicated second nitride region with low first element concentration that acts as a diffusion barrier. The first element is effectively removed from the second nitride region through the diffusion suppression mechanism, preventing current leakage while maintaining the high resistance properties in the first nitride region.
Solution Approach 2:
The potential harmful diffusion of first element dopants is converted into a beneficial structure by designing the second nitride region with specific compositional characteristics that actively trap and suppress dopant migration. The lattice length difference between regions, which could cause misfit dislocations, is converted into a beneficial diffusion barrier that protects the second nitride region from contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively suppresses elemental diffusion, ensuring stable operation and high carrier mobility, thereby improving the reliability and performance of nitride semiconductor devices.
Implementation Method 1
a first nitride region... including a first element... and a second nitride region... with a second lattice length... being different from a first lattice length... suppressing diffusion of the first element
Implementation Method 2
incorporating an intermediate relaxation region to trap and suppress the diffusion of the dopant elements
Data Source
AI summary
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region, and a second nitride region. The first nitride region includes Alx1Ga1-x1N (0≤x1<1). The Alx1Ga1-x1N includes a first element. The first element includes at least one selected from the group consisting of Fe and Mn. The second nitride region includes Alx1Ga1-x1N (0≤x1<1). A direction from the first nitride region to the second nitride region is along a first direction. A second lattice length of the second nitride region in a first axis crossing the first direction is different from a first lattice length of the first nitride region in the first axis.