Nitride Semiconductor Structure for Carrier and Breakdown Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices using nitride semiconductors face challenges in improving their characteristics, such as breakdown voltage and carrier concentration control, which are essential for enhanced performance.
Innovation Solution
The semiconductor device incorporates a specific configuration including a first electrode, a second electrode, a third electrode, a semiconductor member with Alx1Ga1-x1N and Alx2Ga1-x2N regions, a conductive member, insulating members, and a nitride member, where the nitride member is strategically positioned to overlap with the conductive member, thereby controlling carrier concentration and electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional nitride semiconductor structure is used, then the device structure is simple, but the breakdown voltage is insufficient
Solution Approach 1:
The semiconductor device is divided into multiple distinct regions with different Al compositions (first AlGaN region with x1, second AlGaN region with x2 where x2 > x1). This segmentation allows each region to serve specific functions: the lower Al composition region provides high electron mobility while the higher Al composition region provides barrier properties, collectively achieving high breakdown voltage without requiring excessive structural complexity
Solution Approach 2:
Different Al compositions are assigned to different spatial regions of the semiconductor device. The first AlGaN region has Al composition x1 optimized for electron transport, while the second AlGaN region has Al composition x2 optimized for electrical isolation and breakdown voltage enhancement. This local quality differentiation enables the device to achieve superior breakdown voltage characteristics through targeted material properties in specific locations
2Reliability
If carrier concentration is increased to improve conductivity, then electrical conductivity improves, but breakdown voltage decreases
Solution Approach 1:
The patent implements spatially varying Al compositions to simultaneously achieve high conductivity and high breakdown voltage. The first AlGaN region with lower Al composition (x1) maintains high electron concentration and conductivity, while the second AlGaN region with higher Al composition (x2) provides electrical isolation and enhances breakdown voltage. This local differentiation resolves the contradiction by allowing high carrier concentration in specific regions without compromising overall breakdown voltage
Solution Approach 2:
The semiconductor structure is segmented into functional zones: a high-carrier-concentration region for conductivity and a high-Al-composition region for breakdown voltage enhancement. This segmentation allows the device to exploit the beneficial properties of high carrier concentration where needed while using the barrier properties of high-Al regions to maintain high breakdown voltage across the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for local reduction of carrier concentration, leading to increased breakdown voltage and improved semiconductor device characteristics, such as higher reliability and performance.
Implementation Method 1
the nitride member is strategically positioned to overlap with the conductive member, thereby controlling carrier concentration and electric field distribution
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.